We present carrier separation experiments based on direct charge measurement to assess the contributions of electronsand holes to the erase transient of TANOS-like nonvolatilememories. The role of the different carrier species is analyzed asa function of the erase voltage and of the charge configurationat the initial programmed state. We extend the analysis toBand Engineered tunneling barriers, demonstrating that theperformance improvement in these devices lays more in anenhancement of the hole current rather than of the electron one.
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories / A., Suhane; A., Arreghini; G., Van den bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 31:(2010), pp. 936-938. [10.1109/LED.2010.2055824]
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
VANDELLI, LUCA;PADOVANI, ANDREA;LARCHER, Luca;
2010
Abstract
We present carrier separation experiments based on direct charge measurement to assess the contributions of electronsand holes to the erase transient of TANOS-like nonvolatilememories. The role of the different carrier species is analyzed asa function of the erase voltage and of the charge configurationat the initial programmed state. We extend the analysis toBand Engineered tunneling barriers, demonstrating that theperformance improvement in these devices lays more in anenhancement of the hole current rather than of the electron one.
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