In this work, the impact of Ti electrodes on the electricalbehaviour of HfO2-based RRAM devices is conclusivelyclarified. To this aim, devices with Pt, TiN and Ti electrodeshave been fabricated. We first provide severalexperiments to clearly demonstrate that switching is driven bycreation-disruption of a conductive filament. Thus, the role ofTiN/Ti electrodes is explained and modeled based on thepresence of HfOx interfacial layer underneath the electrode. Inaddition, Ti is found responsible to activate bipolar switching.Moreover, it strongly reduces forming and switching voltageswith respect to Pt-Pt devices. Finally, it positively impacts onretention. To support and interpret our results we providephysico-chemical measurements, electrical characterization,ab-initio calculations and modeling.
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM / C., Cagli; J., Buckley; V., Jousseaume; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; P., Lorenzi; L., Massari; R., Rao; F., Irrera; T., Cabout; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; Larcher, Luca; G., Reimbold; B., de Salvo. - ELETTRONICO. - 1:(2011), pp. 28.7.1-28.7.4. ((Intervento presentato al convegno IEEE International Electron Devices Meeting tenutosi a Washington nel 5-7 December 2011 [10.1109/IEDM.2011.6131634].
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM
PADOVANI, ANDREA;PIRROTTA, Onofrio;VANDELLI, LUCA;LARCHER, Luca;
2011-01-01
Abstract
In this work, the impact of Ti electrodes on the electricalbehaviour of HfO2-based RRAM devices is conclusivelyclarified. To this aim, devices with Pt, TiN and Ti electrodeshave been fabricated. We first provide severalexperiments to clearly demonstrate that switching is driven bycreation-disruption of a conductive filament. Thus, the role ofTiN/Ti electrodes is explained and modeled based on thepresence of HfOx interfacial layer underneath the electrode. Inaddition, Ti is found responsible to activate bipolar switching.Moreover, it strongly reduces forming and switching voltageswith respect to Pt-Pt devices. Finally, it positively impacts onretention. To support and interpret our results we providephysico-chemical measurements, electrical characterization,ab-initio calculations and modeling.
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