EnglishWe present a detailed investigation of temperature effects on the operation of TaN/Al2O3 / Si3N4 /SiO2 / Si (TANOS) memory devices. We show that not only retention but also program and erase operations are affected significantly by temperature. Using a large set of experimental data and simulations on a variety of TANOS stacks, we show that the temperature dependence of TANOS program and erase operations can be explained by accounting for that the alumina dielectric constant increases by 20%–25% over a 125 K temperature range.
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations / Padovani, Andrea; Larcher, Luca; D., Heh; G., Bersuker; V., Dellamarca; Pavan, Paolo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - ELETTRONICO. - 96(2010), pp. 223505-1-223505-3.
| Data di pubblicazione: | 2010 |
| Titolo: | Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations |
| Autore/i: | Padovani, Andrea; Larcher, Luca; D., Heh; G., Bersuker; V., Dellamarca; Pavan, Paolo |
| Autore/i UNIMORE: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.3446835 |
| Rivista: | |
| Volume: | 96 |
| Pagina iniziale: | 223505-1 |
| Pagina finale: | 223505-3 |
| Codice identificativo ISI: | WOS:000278404800067 |
| Codice identificativo Scopus: | 2-s2.0-77953583637 |
| Citazione: | Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations / Padovani, Andrea; Larcher, Luca; D., Heh; G., Bersuker; V., Dellamarca; Pavan, Paolo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - ELETTRONICO. - 96(2010), pp. 223505-1-223505-3. |
| Tipologia | Articolo su rivista |
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