We present a detailed investigation of temperature effects on the operation of TaN/Al2O3 / Si3N4 /SiO2 / Si (TANOS) memory devices. We show that not only retention but also program and erase operations are affected significantly by temperature. Using a large set of experimental data and simulations on a variety of TANOS stacks, we show that the temperature dependence of TANOS program and erase operations can be explained by accounting for that the alumina dielectric constant increases by 20%–25% over a 125 K temperature range.
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations / Padovani, Andrea; Larcher, Luca; D., Heh; G., Bersuker; V., Dellamarca; Pavan, Paolo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - ELETTRONICO. - 96:(2010), pp. 223505-1-223505-3. [10.1063/1.3446835]
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations
PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo
2010-01-01
Abstract
We present a detailed investigation of temperature effects on the operation of TaN/Al2O3 / Si3N4 /SiO2 / Si (TANOS) memory devices. We show that not only retention but also program and erase operations are affected significantly by temperature. Using a large set of experimental data and simulations on a variety of TANOS stacks, we show that the temperature dependence of TANOS program and erase operations can be explained by accounting for that the alumina dielectric constant increases by 20%–25% over a 125 K temperature range.
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