In this work we investigate in detail the effects of metal electrodes on the retention performances of HfOx RRAM devices. Motivated by our experimental data, we employ physics-based RRAM modeling and first-principles calculations to show that during the ON-state the concentration of oxygen interstitial (Oi) ions in the oxide depends significantly on the metal electrodes, being much larger for RRAM devices with Pt electrodes compared with Ti. The lower Oi concentration in HfOx with Ti electrodes, known as a strong oxygen getter material, results in improved retention and thermal stability. The presence of oxygen deficient conductive filaments explains the data.
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling / B., Traore; K. H., Xue; E., Vianello; G., Molas; Padovani, Andrea; Pirrotta, Onofrio; Larcher, Luca; P., Blaise; L., Fonseca; B., De Salvo; Y., Nishi. - ELETTRONICO. - (2013), pp. 5E.2.1-5E.2.6. (Intervento presentato al convegno 2013 IEEE International Reliability Physics Symposium, IRPS 2013 tenutosi a Monterey, CA, USA nel 14-18 Aprile 2013) [10.1109/IRPS.2013.6532041].
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling
PADOVANI, ANDREA;PIRROTTA, Onofrio;LARCHER, Luca;
2013
Abstract
In this work we investigate in detail the effects of metal electrodes on the retention performances of HfOx RRAM devices. Motivated by our experimental data, we employ physics-based RRAM modeling and first-principles calculations to show that during the ON-state the concentration of oxygen interstitial (Oi) ions in the oxide depends significantly on the metal electrodes, being much larger for RRAM devices with Pt electrodes compared with Ti. The lower Oi concentration in HfOx with Ti electrodes, known as a strong oxygen getter material, results in improved retention and thermal stability. The presence of oxygen deficient conductive filaments explains the data.
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