EnglishThe random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation of the FoM value over multiple set/reset cycles is found to follow the log-normal distribution. In HRS, P-p decreases with the reduction of the read current, which allows scaling of the RRAM operating current. The RTN effect is attributed to the mechanism of activation/deactivation of the electron traps in (in HRS) or near (in LRS) the filament that affects the current through the RRAM device.
Random telegraph noise (RTN) in scaled RRAM devices / D., Veksler; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Muraviev; B., Chakrabarti; E., Vogel; D. C., Gilmer; P. D., Kirsch. - ELETTRONICO. - (2013), pp. MY.10.1-MY.10.4.
| Data di pubblicazione: | 2013 | |
| Titolo: | Random telegraph noise (RTN) in scaled RRAM devices | |
| Autore/i: | D., Veksler; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Muraviev; B., Chakrabarti; E., Vogel; D. C., Gilmer; P. D., Kirsch | |
| Autore/i UNIMORE: | ||
| Data del convegno: | 14-18 Aprile 2013 | |
| Luogo del convegno: | Monterey, CA, USA | |
| Tipologia | Poster |
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