We observe a trend between initial leakage currents in polycrystalline HfOx resisitive random access memory (RRAM) cells (before forming) and the forming voltages. This trend points to the dominant role played by conduction paths located at grain boundaries, which is promoted by the oxygen deficiency in ${rm HfO}_{rm x}$. One of these paths is then converted into the conductive filament responsible for nonvolatile resistance switching. In addition, we find that by engineering the RRAM stack, the forming voltage can be tuned-up to meet specific RRAM requirements, such as lower power and forming-less operations.

Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices / K. G., Young Fisher; G., Bersuker; B., Butcher; Padovani, Andrea; Larcher, Luca; D., Veksler; D. C., Gilmer. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - ELETTRONICO. - 34:6(2013), pp. 750-752. [10.1109/LED.2013.2256101]

Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices

PADOVANI, ANDREA;LARCHER, Luca;
2013

Abstract

We observe a trend between initial leakage currents in polycrystalline HfOx resisitive random access memory (RRAM) cells (before forming) and the forming voltages. This trend points to the dominant role played by conduction paths located at grain boundaries, which is promoted by the oxygen deficiency in ${rm HfO}_{rm x}$. One of these paths is then converted into the conductive filament responsible for nonvolatile resistance switching. In addition, we find that by engineering the RRAM stack, the forming voltage can be tuned-up to meet specific RRAM requirements, such as lower power and forming-less operations.
2013
34
6
750
752
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices / K. G., Young Fisher; G., Bersuker; B., Butcher; Padovani, Andrea; Larcher, Luca; D., Veksler; D. C., Gilmer. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - ELETTRONICO. - 34:6(2013), pp. 750-752. [10.1109/LED.2013.2256101]
K. G., Young Fisher; G., Bersuker; B., Butcher; Padovani, Andrea; Larcher, Luca; D., Veksler; D. C., Gilmer
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/929891
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 57
  • ???jsp.display-item.citation.isi??? 55
social impact