We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using charge-transport simulations based on phonon-assisted carrier tunneling between trap sites, we demonstrate that higher currents generally observed in HfOx are due to a higher density of the as-grown oxygen vacancy defects assisting the charge transport. Reduction of the dielectric breakdown field (EBD) in HfOx is explained by the lower zero-field activation energy (EA,G) of the defect generation process, as extracted from time-dependent dielectric breakdown experiments.

Charge Transport and Degradation in HfO2 and HfOx Dielectrics / Padovani, Andrea; Larcher, Luca; Gennadi, Bersuker; Pavan, Paolo. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 34(2013), pp. 680-682. [10.1109/LED.2013.2251602]

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