This paper presents an original approach for material studies for memory devices where the degree of intermixing between the high-k and interfacial SiO2 is explicitly quantified experimentally. Using calibrated leakage simulation the importance of intermixing is verified independently together with the conduction mechanism. The implication for NVM reliability are profound and will be discussed toward retention mechanisms and used to optimize retention margins for NVM memories.
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing / Morassi, Luca; Larcher, Luca; L., Pantisano; Padovani, Andrea; R., Degreave; M. B., Zahid; B. J., O'Sullivan. - STAMPA. - (2009), pp. 1-2. (Intervento presentato al convegno 41th International Conference on Solid State Devices and Materials tenutosi a Sendai, Japan nel 6-9 October, 2009).