MORASSI, LUCA

MORASSI, LUCA  

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Titolo Data di pubblicazione Autore(i) File
A Physical Model for Post-Breakdown Digital Gate Current Noise 1-gen-2010 Padovani, Andrea; Morassi, Luca; N., Raghavan; Larcher, Luca; L., Wenhu; K. L., Pey; G., Bersuker
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 1-gen-2009 Morassi, Luca; Larcher, Luca; L., Pantisano; Padovani, Andrea; R., Degreave; M. B., Zahid; B. J., O'Sullivan
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 1-gen-2010 Morassi, Luca; Verzellesi, Giovanni; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; D., Veksler; Injo, Ok; G., Bersuker
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 1-gen-2017 Anwar, Sarkar R. M.; Vandenberghe, William G.; Bersuker, Gennadi; Veksler, Dmitry; Verzellesi, Giovanni; Morassi, Luca; Galatage, Rohit V.; Jha, Sumit; Buie, Creighton; Barton, Adam T.; Vogel, Eric M.; Hinkle, Christopher L.
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 1-gen-2017 Anwar, Sarkar R. M.; Vandenberghe, William G.; Bersuker, Gennadi; Veksler, Dmitry; Verzellesi, Giovanni; Morassi, Luca; Galatage, Rohit V.; Jha, Sumit; Buie, Creighton; Barton, Adam T.; Vogel, Eric M.; Hinkle, Christopher L.
Connecting electrical and structural dielectric characteristics 1-gen-2009 G., Bersuker; D., Veksler; C. D., Young; H., Park; Morassi, Luca; Padovani, Andrea; Larcher, Luca; W., Taylor; P. D., Kirsch; R., Jammy
Connecting electrical and structural dielectric characteristics 1-gen-2011 G., Bersuker; D., Veksler; C. D., Young; H. Park W., Taylor; P., Kirsch; R., Jammy; Morassi, Luca; Padovani, Andrea; Larcher, Luca
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 1-gen-2012 Morassi, Luca; Verzellesi, Giovanni; Han, Zhao; Jack C., Lee; Dmitry, Veksler; Gennadi, Bersuker
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs 1-gen-2011 Morassi, Luca; Verzellesi, Giovanni; Larcher, Luca; H., Zhao; J. C., Lee
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 1-gen-2012 Morassi, Luca; Verzellesi, Giovanni; H., Zhao; J. C., Lee; D., Veksler; G., Bersuker
Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric 1-gen-2011 Morassi, Luca; Verzellesi, Giovanni; Pavan, Paolo; D., Veksler; I., Ok; H., Zhao; J. C., Lee; G., Bersuker
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 1-gen-2014 Verzellesi, Giovanni; Morassi, Luca; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico; Pozzovivo, Gianmauro; Lavanga, Simone; Detzel, Thomas; Haberlen, Oliver; Curatola, Gilberto
Interface-trap effects in inversion-type enhancement-mode InGaAs/ZrO2 n-channel MOSFETs 1-gen-2011 Morassi, Luca; Padovani, Andrea; Verzellesi, Giovanni; D., Veksler; I., Ok; G., Bersuker
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 1-gen-2010 G., Bersuker; D., Heh; C. D., Young; Morassi, Luca; Padovani, Andrea; Larcher, Luca; K. S., Yew; Y. C., Ong; D. S., Ang; K. L., Pey; W., Taylor
Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics 1-gen-2010 Morassi, Luca; Padovani, Andrea; Verzellesi, Giovanni; D., Veksler; I., Ok; G., Bersuker