We analyze the electrical behavior of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric by means of measurements and numerical device simulations, with the aim of pointing out peculiar aspects that can be critical for device design/optimization purposes. Our analysis focuses in particular on effects associated with traps at the dielec-tric/barrier interface and unintentional doping in the buffer layer, showing their combined impact on crucial device pa-rameters like threshold voltage, subthreshold slope and drain-bias dependence of subthreshold drain current.

Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric / Morassi, Luca; Verzellesi, Giovanni; Pavan, Paolo; D., Veksler; I., Ok; H., Zhao; J. C., Lee; G., Bersuker. - STAMPA. - (2011), pp. 103-105. ((Intervento presentato al convegno 23rd International Conference on Indium Phosphide and Related Materials tenutosi a Berlin (Germany) nel May 2011.

Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric

MORASSI, LUCA;VERZELLESI, Giovanni;PAVAN, Paolo;
2011

Abstract

We analyze the electrical behavior of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric by means of measurements and numerical device simulations, with the aim of pointing out peculiar aspects that can be critical for device design/optimization purposes. Our analysis focuses in particular on effects associated with traps at the dielec-tric/barrier interface and unintentional doping in the buffer layer, showing their combined impact on crucial device pa-rameters like threshold voltage, subthreshold slope and drain-bias dependence of subthreshold drain current.
23rd International Conference on Indium Phosphide and Related Materials
Berlin (Germany)
May 2011
103
105
Morassi, Luca; Verzellesi, Giovanni; Pavan, Paolo; D., Veksler; I., Ok; H., Zhao; J. C., Lee; G., Bersuker
Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric / Morassi, Luca; Verzellesi, Giovanni; Pavan, Paolo; D., Veksler; I., Ok; H., Zhao; J. C., Lee; G., Bersuker. - STAMPA. - (2011), pp. 103-105. ((Intervento presentato al convegno 23rd International Conference on Indium Phosphide and Related Materials tenutosi a Berlin (Germany) nel May 2011.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/652843
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