Interface-trap effects are analyzed in inversion-type, self-aligned In0.53Ga0.47As and In0.53Ga0.47As/In0.2Ga0.8As MOSFETs with ALD ZrO2 gate dielectric. Interface-trap densities in the order of 1e13 cm-2 eV-1 are required to explain the measured subthreshold slopes. For these Dit values, donor-like interface traps are compatible with threshold-voltage values in the 0-0.15 V range as those observed in these devices. Moreover, the presence of donor-like interface traps can explain the negative threshold-voltage shift induced by the inclusion of the In0.2Ga0.8As cap layer, as the result of the influence of interface traps located at the In0.2Ga0.8As/ZrO2 interface on the inversion channel forming at the In0.53Ga0.47As/In0.2Ga0.8As interface.

Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs / Morassi, Luca; Verzellesi, Giovanni; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; D., Veksler; Injo, Ok; G., Bersuker. - ELETTRONICO. - (2010), pp. 532-535. ((Intervento presentato al convegno 2010 IEEE International Reliability Physics Symposium, IRPS 2010 tenutosi a Anaheim, CA, USA nel May 2010 [10.1109/IRPS.2010.5488774].

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