An attempt is made to correlate electrical measurement results to specific defects in the dielectric stacks of high-k/metal gate devices. Defect characteristics extracted from electrical data were compared to those obtained by ab initio calculations of the dielectric structures. It is demonstrated that oxygen vacancies in a variety of charge states and configurations in the interfacial SiO2 layer of the high-k gate stacks contribute to random telegraph noise signal, time-dependent dielectric breakdown, and the flatband voltage roll-off phenomenon.
Connecting electrical and structural dielectric characteristics / G., Bersuker; D., Veksler; C. D., Young; H. Park W., Taylor; P., Kirsch; R., Jammy; Morassi, Luca; Padovani, Andrea; Larcher, Luca. - In: INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS AND SYSTEMS. - STAMPA. - 20:1(2011), pp. 65-79. [10.1142/S0129156411006416]
Connecting electrical and structural dielectric characteristics
MORASSI, LUCA;PADOVANI, ANDREA;LARCHER, Luca
2011
Abstract
An attempt is made to correlate electrical measurement results to specific defects in the dielectric stacks of high-k/metal gate devices. Defect characteristics extracted from electrical data were compared to those obtained by ab initio calculations of the dielectric structures. It is demonstrated that oxygen vacancies in a variety of charge states and configurations in the interfacial SiO2 layer of the high-k gate stacks contribute to random telegraph noise signal, time-dependent dielectric breakdown, and the flatband voltage roll-off phenomenon.
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