Properties of InGaAs buried-channel quantum-well MOSFETs affected by the barrier and buffer layers are analyzed by numerical simulations to assist device engineering and optimization. The interplay between the charge-neutrality level position at the barrier/dielectric interface and conduction band discontinuity at the barrier/channel interface is shown to critically impact the achievement of an enhancement-mode device with full turn-on. A p-doped buffer is found to be a more suitable option than the standard unintentionally doped buffers to control short-channel effects.
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs / Morassi, Luca; Verzellesi, Giovanni; Han, Zhao; Jack C., Lee; Dmitry, Veksler; Gennadi, Bersuker. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 59:(2012), pp. 3651-3654. [10.1109/TED.2012.2219534]
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs
MORASSI, LUCA;VERZELLESI, Giovanni;
2012-01-01
Abstract
Properties of InGaAs buried-channel quantum-well MOSFETs affected by the barrier and buffer layers are analyzed by numerical simulations to assist device engineering and optimization. The interplay between the charge-neutrality level position at the barrier/dielectric interface and conduction band discontinuity at the barrier/channel interface is shown to critically impact the achievement of an enhancement-mode device with full turn-on. A p-doped buffer is found to be a more suitable option than the standard unintentionally doped buffers to control short-channel effects.
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