The accuracy of the split-CV mobility extraction method is analyzed in implant-free, buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric through a “simulated experiment” procedure. The different error sources affecting the method accuracy are pointed out. As a result of these errors, the split-CV mobility can appreciably underestimate the actual channel mobility under on-state conditions.
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs / Morassi, Luca; Verzellesi, Giovanni; Larcher, Luca; H., Zhao; J. C., Lee. - STAMPA. - (2011), pp. 327-329. (Intervento presentato al convegno 23rd International Conference on Indium Phosphide and Related Materials tenutosi a Berlin (Germany) nel May 2011).
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs
MORASSI, LUCA;VERZELLESI, Giovanni;LARCHER, Luca;
2011
Abstract
The accuracy of the split-CV mobility extraction method is analyzed in implant-free, buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric through a “simulated experiment” procedure. The different error sources affecting the method accuracy are pointed out. As a result of these errors, the split-CV mobility can appreciably underestimate the actual channel mobility under on-state conditions.
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