A mechanism of degradation and breakdown in highk/metal gate transistors was investigated. Based on the electricaltest, physical analysis, and modeling results, we propose that thebreakdown path formation/evolution in the interfacial SiO2 layeris associated with the growth of an oxygen-deficient filamentfacilitated by the grain boundaries of the overlaying high-k film.The model allows reproducing SILC temperature dependencyand its exponential increase from the fresh through soft andprogressive breakdown phases.
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer / G., Bersuker; D., Heh; C. D., Young; Morassi, Luca; Padovani, Andrea; Larcher, Luca; K. S., Yew; Y. C., Ong; D. S., Ang; K. L., Pey; W., Taylor. - STAMPA. - (2010), pp. 373-378. (Intervento presentato al convegno 2010 IEEE International Reliability Physics Symposium, IRPS 2010 tenutosi a Anaheim (CA, USA) nel May 2010) [10.1109/IRPS.2010.5488800].
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer
MORASSI, LUCA;PADOVANI, ANDREA;LARCHER, Luca;
2010
Abstract
A mechanism of degradation and breakdown in highk/metal gate transistors was investigated. Based on the electricaltest, physical analysis, and modeling results, we propose that thebreakdown path formation/evolution in the interfacial SiO2 layeris associated with the growth of an oxygen-deficient filamentfacilitated by the grain boundaries of the overlaying high-k film.The model allows reproducing SILC temperature dependencyand its exponential increase from the fresh through soft andprogressive breakdown phases.
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