A mechanism of degradation and breakdown in highk/metal gate transistors was investigated. Based on the electricaltest, physical analysis, and modeling results, we propose that thebreakdown path formation/evolution in the interfacial SiO2 layeris associated with the growth of an oxygen-deficient filamentfacilitated by the grain boundaries of the overlaying high-k film.The model allows reproducing SILC temperature dependencyand its exponential increase from the fresh through soft andprogressive breakdown phases.

Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer / G., Bersuker; D., Heh; C. D., Young; Morassi, Luca; Padovani, Andrea; Larcher, Luca; K. S., Yew; Y. C., Ong; D. S., Ang; K. L., Pey; W., Taylor. - STAMPA. - (2010), pp. 373-378. (Intervento presentato al convegno 2010 IEEE International Reliability Physics Symposium, IRPS 2010 tenutosi a Anaheim (CA, USA) nel May 2010) [10.1109/IRPS.2010.5488800].

Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer

MORASSI, LUCA;PADOVANI, ANDREA;LARCHER, Luca;
2010

Abstract

A mechanism of degradation and breakdown in highk/metal gate transistors was investigated. Based on the electricaltest, physical analysis, and modeling results, we propose that thebreakdown path formation/evolution in the interfacial SiO2 layeris associated with the growth of an oxygen-deficient filamentfacilitated by the grain boundaries of the overlaying high-k film.The model allows reproducing SILC temperature dependencyand its exponential increase from the fresh through soft andprogressive breakdown phases.
2010
2010 IEEE International Reliability Physics Symposium, IRPS 2010
Anaheim (CA, USA)
May 2010
373
378
G., Bersuker; D., Heh; C. D., Young; Morassi, Luca; Padovani, Andrea; Larcher, Luca; K. S., Yew; Y. C., Ong; D. S., Ang; K. L., Pey; W., Taylor
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer / G., Bersuker; D., Heh; C. D., Young; Morassi, Luca; Padovani, Andrea; Larcher, Luca; K. S., Yew; Y. C., Ong; D. S., Ang; K. L., Pey; W., Taylor. - STAMPA. - (2010), pp. 373-378. (Intervento presentato al convegno 2010 IEEE International Reliability Physics Symposium, IRPS 2010 tenutosi a Anaheim (CA, USA) nel May 2010) [10.1109/IRPS.2010.5488800].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/643086
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