In this paper, we will present the basic structure and the parameter extraction procedure for a compact model of a NAND Flash memory string working in Spice-like circuit simulators. To the author knowledge, this is the first Spice-like model of a NAND Flash memory string. This model is modular and simple to be implemented. It will allow accurately reproducing both DC and transient behavior of NAND Flash memories without increasing computational effort, thus becoming an indispensable tool for designers to optimize circuits especially in multi-level applications.

Modeling NAND Flash memories for circuit simulations / Larcher, Luca; Padovani, Andrea; I., Rimmaudo; Pavan, Paolo; A., Calderoni; G., Molteni; F., Gattel; P., Fantini. - STAMPA. - (2007), pp. 293-296. ((Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices, IEEE SISPAD 2007 tenutosi a Vienna (Austria) nel September 2007.

Modeling NAND Flash memories for circuit simulations

LARCHER, Luca;PADOVANI, ANDREA;PAVAN, Paolo;
2007-01-01

Abstract

In this paper, we will present the basic structure and the parameter extraction procedure for a compact model of a NAND Flash memory string working in Spice-like circuit simulators. To the author knowledge, this is the first Spice-like model of a NAND Flash memory string. This model is modular and simple to be implemented. It will allow accurately reproducing both DC and transient behavior of NAND Flash memories without increasing computational effort, thus becoming an indispensable tool for designers to optimize circuits especially in multi-level applications.
International Conference on Simulation of Semiconductor Processes and Devices, IEEE SISPAD 2007
Vienna (Austria)
September 2007
293
296
Larcher, Luca; Padovani, Andrea; I., Rimmaudo; Pavan, Paolo; A., Calderoni; G., Molteni; F., Gattel; P., Fantini
Modeling NAND Flash memories for circuit simulations / Larcher, Luca; Padovani, Andrea; I., Rimmaudo; Pavan, Paolo; A., Calderoni; G., Molteni; F., Gattel; P., Fantini. - STAMPA. - (2007), pp. 293-296. ((Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices, IEEE SISPAD 2007 tenutosi a Vienna (Austria) nel September 2007.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/587550
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