This paper reports on recent progresses in modeling bi-polar RRAM devices based on hafnium oxide. The unique modeling environment adopted for the simulation of device operations accounts self-consistently for the charge and ion transport, and the structural device modification occurring during forming and set/reset operations. Reliability mechanisms as well as the major sources of devices variability are included thanks to a multi-scale approach that connects the electrical device performance to the atomic-level material properties. The modeling methodology can be successfully applied to both improve device performances and fabrication process of state-of-the-art RRAM devices, and devise device solutions for future 3D RRAM architectures.

Progresses in Modeling HfOx RRAM Operations and Variability / Larcher, Luca; Pirrotta, Onofrio; Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Vandelli, Luca. - In: ECS TRANSACTIONS. - ISSN 1938-6737. - ELETTRONICO. - 64:(2014), pp. 49-60. [10.1149/06414.0049ecst]

Progresses in Modeling HfOx RRAM Operations and Variability

LARCHER, Luca;PIRROTTA, Onofrio;PUGLISI, Francesco Maria;PADOVANI, ANDREA;PAVAN, Paolo;VANDELLI, LUCA
2014

Abstract

This paper reports on recent progresses in modeling bi-polar RRAM devices based on hafnium oxide. The unique modeling environment adopted for the simulation of device operations accounts self-consistently for the charge and ion transport, and the structural device modification occurring during forming and set/reset operations. Reliability mechanisms as well as the major sources of devices variability are included thanks to a multi-scale approach that connects the electrical device performance to the atomic-level material properties. The modeling methodology can be successfully applied to both improve device performances and fabrication process of state-of-the-art RRAM devices, and devise device solutions for future 3D RRAM architectures.
64
49
60
Larcher, Luca; Pirrotta, Onofrio; Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Vandelli, Luca
Progresses in Modeling HfOx RRAM Operations and Variability / Larcher, Luca; Pirrotta, Onofrio; Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Vandelli, Luca. - In: ECS TRANSACTIONS. - ISSN 1938-6737. - ELETTRONICO. - 64:(2014), pp. 49-60. [10.1149/06414.0049ecst]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1063395
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