This paper reports on recent progresses in modeling bi-polar RRAM devices based on hafnium oxide. The unique modeling environment adopted for the simulation of device operations accounts self-consistently for the charge and ion transport, and the structural device modification occurring during forming and set/reset operations. Reliability mechanisms as well as the major sources of devices variability are included thanks to a multi-scale approach that connects the electrical device performance to the atomic-level material properties. The modeling methodology can be successfully applied to both improve device performances and fabrication process of state-of-the-art RRAM devices, and devise device solutions for future 3D RRAM architectures.

Progresses in Modeling HfOx RRAM Operations and Variability / Larcher, Luca; Pirrotta, Onofrio; Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Vandelli, Luca. - In: ECS TRANSACTIONS. - ISSN 1938-6737. - ELETTRONICO. - 64(2014), pp. 49-60. [10.1149/06414.0049ecst]

I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Powered by IRIS-about IRIS-Utilizzo dei cookie

 Copyright © 2022