EnglishThis paper reports on recent progresses in modeling bi-polar RRAM devices based on hafnium oxide. The unique modeling environment adopted for the simulation of device operations accounts self-consistently for the charge and ion transport, and the structural device modification occurring during forming and set/reset operations. Reliability mechanisms as well as the major sources of devices variability are included thanks to a multi-scale approach that connects the electrical device performance to the atomic-level material properties. The modeling methodology can be successfully applied to both improve device performances and fabrication process of state-of-the-art RRAM devices, and devise device solutions for future 3D RRAM architectures.
| Data di pubblicazione: | 2014 |
| Titolo: | Progresses in Modeling HfOx RRAM Operations and Variability |
| Autore/i: | Larcher, Luca; Pirrotta, Onofrio; Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Vandelli, Luca |
| Autore/i UNIMORE: | |
| Digital Object Identifier (DOI): | 10.1149/06414.0049ecst |
| Citazione: | Progresses in Modeling HfOx RRAM Operations and Variability / Larcher, Luca; Pirrotta, Onofrio; Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Vandelli, Luca. - In: ECS TRANSACTIONS. - ISSN 1938-6737. - ELETTRONICO. - 64(2014), pp. 49-60. |
| Tipologia | Relazione in Atti di Convegno |
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http://hdl.handle.net/11380/1063395
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