Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach

Padovani, Andrea; Larcher, Luca; Chimenton, A.; Pavan, Paolo; Olivo, P.

doi:10.1149/1.2767314

In this paper, we present a physically-based Monte-Carlo (MC) model reproducing the leakage current flowing across typical dielectric layers (SiO2, high-k) used in ULSI technologies. Simulations will be shown to predict accurately currents measured on MOSFETs, large area MOS capacitor, and tunnel oxides of Flash memories after electrical and radiation stresses. Statistical aspects related to leakage current and threshold voltage are reproduced correctly, allowing worst case corner prediction, necessary to assess dielectric damaging effects on logic circuits and non-volatile memory operation.

Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach / Padovani, Andrea; Larcher, Luca; A., Chimenton; Pavan, Paolo; P., Olivo. - In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - ISSN 0013-4651. - STAMPA. - 8(2007), pp. 237-242.

Data di pubblicazione:	2007
Titolo:	Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach
Autore/i:	Padovani, Andrea; Larcher, Luca; A., Chimenton; Pavan, Paolo; P., Olivo
Autore/i UNIMORE:	PADOVANI, ANDREA LARCHER, Luca A. Chimenton PAVAN, Paolo P. Olivo mostra contributor esterni nascondi contributor esterni
Digital Object Identifier (DOI):	http://dx.doi.org/10.1149/1.2767314
Codice identificativo Scopus:	2-s2.0-45749154193
Rivista:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume:	8
Pagina iniziale:	237
Pagina finale:	242
Citazione:	Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach / Padovani, Andrea; Larcher, Luca; A., Chimenton; Pavan, Paolo; P., Olivo. - In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - ISSN 0013-4651. - STAMPA. - 8(2007), pp. 237-242.
Tipologia	Relazione in Atti di Convegno

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http://hdl.handle.net/11380/584788

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