In modern electronic devices, a variety of novel materials have been introduced such as transition metal oxides, chalcogenides, ferroelectric, and magnetic materials. The electrical response of such materials, used also as active layers, is strongly affected by atomic defects, which affect device performances, variability, and reliability. Extracting the defect properties (i.e., density, energy, and atomic nature) is, thus, crucial to both engineer the performances of electron devices and correctly project their scaling potential and reliability. In this paper, we propose a simple method to extract the atomic properties of defects from the thermal activation energy of the leakage current using a charge trapping relaxation model.

Extracting Atomic Defect Properties From Leakage Current Temperature Dependence / Larcher, Luca; Padovani, Andrea; Puglisi, Francesco Maria; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 65:12(2018), pp. 5475-5480. [10.1109/TED.2018.2874513]

Extracting Atomic Defect Properties From Leakage Current Temperature Dependence

Larcher, Luca;Padovani, Andrea;Puglisi, Francesco Maria
;
Pavan, Paolo
2018

Abstract

In modern electronic devices, a variety of novel materials have been introduced such as transition metal oxides, chalcogenides, ferroelectric, and magnetic materials. The electrical response of such materials, used also as active layers, is strongly affected by atomic defects, which affect device performances, variability, and reliability. Extracting the defect properties (i.e., density, energy, and atomic nature) is, thus, crucial to both engineer the performances of electron devices and correctly project their scaling potential and reliability. In this paper, we propose a simple method to extract the atomic properties of defects from the thermal activation energy of the leakage current using a charge trapping relaxation model.
65
12
5475
5480
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence / Larcher, Luca; Padovani, Andrea; Puglisi, Francesco Maria; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 65:12(2018), pp. 5475-5480. [10.1109/TED.2018.2874513]
Larcher, Luca; Padovani, Andrea; Puglisi, Francesco Maria; Pavan, Paolo
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1175099
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