The connection between the bi-polar hafnia-based resistive-RAM (RRAM) operational characteristics and dielectric structural properties is considered. Specifically, the atomic-level description of RRAM, which operations involve the repeatable rupture/recreation of a localized conductive path, reveals that its performance is determined by the outcome of the initial forming process defining the structural characteristics of the conductive filament and distribution of the oxygen ions released from the filament region. The post-forming ions spatial distribution in the cell is found to be linked to a degree of dielectric oxygen deficiency, which may either assist or suppress the resistive switching processes.
Dielectric morphology and RRAM resistive switching characteristics / Bersuker, G.; Butcher, B.; Gilmer, D. C.; Larcher, Luca; Padovani, A; Geer, R.; Kirsch, P. D.. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - 1691:(2014). (Intervento presentato al convegno 2014 MRS Spring Meeting tenutosi a San Francisco nel 21/04/2014) [10.1557/opl.2014.596].
Dielectric morphology and RRAM resistive switching characteristics
LARCHER, Luca;Padovani,A;
2014
Abstract
The connection between the bi-polar hafnia-based resistive-RAM (RRAM) operational characteristics and dielectric structural properties is considered. Specifically, the atomic-level description of RRAM, which operations involve the repeatable rupture/recreation of a localized conductive path, reveals that its performance is determined by the outcome of the initial forming process defining the structural characteristics of the conductive filament and distribution of the oxygen ions released from the filament region. The post-forming ions spatial distribution in the cell is found to be linked to a degree of dielectric oxygen deficiency, which may either assist or suppress the resistive switching processes.
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