EnglishThe understanding of the physical mechanisms responsible of charge transport and degradation in high-k stacks is fundamental for the optimization of advanced logic (MOSFETs) and memory (RRAM, DRAM) devices. In this paper, we present a comprehensive physical model describing the charge transport and the degradation/breakdown processes in the HfO2 layer. This model allows gaining quantitative insights into the physics governing leakage current and degradation processes in HfO2 stacks, reproducing gate current and TDDB statistics
(Invited) Physical Modeling of Charge Transport and Degradation in HfO2 Stacks for Logic Device and Memory Applications / Larcher, Luca; Padovani, Andrea; Vandelli, Luca; G., Bersuker. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - STAMPA. - 37(2011), pp. 189-197.
| Data di pubblicazione: | 2011 |
| Titolo: | (Invited) Physical Modeling of Charge Transport and Degradation in HfO2 Stacks for Logic Device and Memory Applications |
| Autore/i: | Larcher, Luca; Padovani, Andrea; Vandelli, Luca; G., Bersuker |
| Autore/i UNIMORE: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1149/1.3600739 |
| Codice identificativo Scopus: | 2-s2.0-84856841441 |
| Codice identificativo ISI: | WOS:000305898900021 |
| Rivista: | ECS TRANSACTIONS |
| Volume: | 37 |
| Pagina iniziale: | 189 |
| Pagina finale: | 197 |
| Citazione: | (Invited) Physical Modeling of Charge Transport and Degradation in HfO2 Stacks for Logic Device and Memory Applications / Larcher, Luca; Padovani, Andrea; Vandelli, Luca; G., Bersuker. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - STAMPA. - 37(2011), pp. 189-197. |
| Tipologia | Relazione in Atti di Convegno |
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