This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data retention and endurance. . HfO2-RRAM devices (in a 1T1R configuration) integrated in an advanced 65 nm technology are studied for this aim. We show that forming operation is strongly activated in temperature (i.e. -0.5 V per hundred Celsius degree), being much less for SET and RESET voltages (i.e. < -0.05 V per hundred Celsius degree); disturb of HRS at fixed voltage showed to be independent of temperature; endurance up to 3.106 cycles, with optimized set of stress parameters showed no significant variation; data retention at 150 °C up to 68 days showed stable programming window, after different initial programming algorithms.
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs / T., Cabout; L., Perniola; V., Jousseaume; H., Grampeix; J. F., Nodin; A., Toffoli; E., Jalaguier; E., Vianello; G., Molas; G., Reimbold; B., De Salvo; Pirrotta, Onofrio; Padovani, Andrea; Larcher, Luca; T., Diokh; P., Candelier; M., Guillermet; M., Bocquet; C., Muller. - ELETTRONICO. - (2013), pp. 116-119. ((Intervento presentato al convegno IEEE International Memory Workshop tenutosi a Monterey, CA, USA nel 26-29 May 2013 [10.1109/IMW.2013.6582112].
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs
PIRROTTA, Onofrio;PADOVANI, ANDREA;LARCHER, Luca;
2013-01-01
Abstract
This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data retention and endurance. . HfO2-RRAM devices (in a 1T1R configuration) integrated in an advanced 65 nm technology are studied for this aim. We show that forming operation is strongly activated in temperature (i.e. -0.5 V per hundred Celsius degree), being much less for SET and RESET voltages (i.e. < -0.05 V per hundred Celsius degree); disturb of HRS at fixed voltage showed to be independent of temperature; endurance up to 3.106 cycles, with optimized set of stress parameters showed no significant variation; data retention at 150 °C up to 68 days showed stable programming window, after different initial programming algorithms.
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