In this paper we present a comprehensive examination of the characteristics of complex Random Telegraph Noise (RTN) signals in Resistive Random Access Memory (RRAM) devices with TiN/Ti/HfO2/TiN structure. Initially, the anomalous RTN (aRTN) is investigated through careful systematic experiment, dedicated characterization procedures, and physics-based simulations to gain insights into the physics of this phenomenon. The experimentally observed RTN parameters (amplitude of the current fluctuations, capture and emission times) are analyzed in different operating conditions. Anomalous behaviors are characterized and their statistical characteristics are evaluated. Physics-based simulations considering both the Coulomb interactions among different defects in the device and the possible existence of defects with metastable states are exploited to suggest a possible physical origin of aRTN. The same simulation framework is also shown to be able to predict other temporary phenomena related to RTN, such as the temporary change in RTN stochastic properties or the sudden and iterative random appearing and vanishing of RTN fluctuations always exhibiting the same statistical characteristics. Results highlight the central role of the electrostatic interactions among individual defects and the trapped charge in describing RTN and related phenomena.

Anomalous random telegraph noise and temporary phenomena in resistive random access memory / Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 125:(2016), pp. 204-213. [10.1016/j.sse.2016.07.019]

Anomalous random telegraph noise and temporary phenomena in resistive random access memory

PUGLISI, Francesco Maria;LARCHER, Luca;PADOVANI, ANDREA;PAVAN, Paolo
2016

Abstract

In this paper we present a comprehensive examination of the characteristics of complex Random Telegraph Noise (RTN) signals in Resistive Random Access Memory (RRAM) devices with TiN/Ti/HfO2/TiN structure. Initially, the anomalous RTN (aRTN) is investigated through careful systematic experiment, dedicated characterization procedures, and physics-based simulations to gain insights into the physics of this phenomenon. The experimentally observed RTN parameters (amplitude of the current fluctuations, capture and emission times) are analyzed in different operating conditions. Anomalous behaviors are characterized and their statistical characteristics are evaluated. Physics-based simulations considering both the Coulomb interactions among different defects in the device and the possible existence of defects with metastable states are exploited to suggest a possible physical origin of aRTN. The same simulation framework is also shown to be able to predict other temporary phenomena related to RTN, such as the temporary change in RTN stochastic properties or the sudden and iterative random appearing and vanishing of RTN fluctuations always exhibiting the same statistical characteristics. Results highlight the central role of the electrostatic interactions among individual defects and the trapped charge in describing RTN and related phenomena.
2016
125
204
213
Anomalous random telegraph noise and temporary phenomena in resistive random access memory / Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 125:(2016), pp. 204-213. [10.1016/j.sse.2016.07.019]
Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
File in questo prodotto:
File Dimensione Formato  
Anomalous random telegraph noise and temporary phenomena.pdf

Accesso riservato

Descrizione: Versione editoriale
Tipologia: Versione pubblicata dall'editore
Dimensione 2.76 MB
Formato Adobe PDF
2.76 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
F. M. Puglisi et al. - Anomalous Random Telegraph Noise and Temporary Phenomena in Resistive Random Access Memory - Final.pdf

Open access

Tipologia: Versione dell'autore revisionata e accettata per la pubblicazione
Dimensione 1.88 MB
Formato Adobe PDF
1.88 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1129410
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 25
  • ???jsp.display-item.citation.isi??? 23
social impact