In this work, we presented a new technique to profile hole distribution in NROM devices. The evolution of the nitride charge in cycled cells was monitored. The key role played by holes in NROM retention degradation was identified. Electron injection far from the junction and VT drift in erased NROM cells are successfully explained.
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention / Padovani, Andrea; Larcher, Luca; Pavan, Paolo. - STAMPA. - 1:(2007), pp. 654-655. ((Intervento presentato al convegno 45th IEEE International Reliability Physics Symposium (IEEE IRPS) tenutosi a Phoenix, Arizona (USA) nel April 15-19, 2007.
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention
PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo
2007-01-01
Abstract
In this work, we presented a new technique to profile hole distribution in NROM devices. The evolution of the nitride charge in cycled cells was monitored. The key role played by holes in NROM retention degradation was identified. Electron injection far from the junction and VT drift in erased NROM cells are successfully explained.
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