In this work, we presented a new technique to profile hole distribution in NROM devices. The evolution of the nitride charge in cycled cells was monitored. The key role played by holes in NROM retention degradation was identified. Electron injection far from the junction and VT drift in erased NROM cells are successfully explained.

Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention / Padovani, Andrea; Larcher, Luca; Pavan, Paolo. - STAMPA. - 1:(2007), pp. 654-655. ((Intervento presentato al convegno 45th IEEE International Reliability Physics Symposium (IEEE IRPS) tenutosi a Phoenix, Arizona (USA) nel April 15-19, 2007.

Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention

PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo
2007-01-01

Abstract

In this work, we presented a new technique to profile hole distribution in NROM devices. The evolution of the nitride charge in cycled cells was monitored. The key role played by holes in NROM retention degradation was identified. Electron injection far from the junction and VT drift in erased NROM cells are successfully explained.
45th IEEE International Reliability Physics Symposium (IEEE IRPS)
Phoenix, Arizona (USA)
April 15-19, 2007
1
654
655
Padovani, Andrea; Larcher, Luca; Pavan, Paolo
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention / Padovani, Andrea; Larcher, Luca; Pavan, Paolo. - STAMPA. - 1:(2007), pp. 654-655. ((Intervento presentato al convegno 45th IEEE International Reliability Physics Symposium (IEEE IRPS) tenutosi a Phoenix, Arizona (USA) nel April 15-19, 2007.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/587547
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