We present a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, degradation and atomic species motion) to interpret the reliability and electrical characteristics of logic and memory devices. The model is used to identify and characterize the dielectric defects responsible for the charge transport and degradation in SiOx/high-k (HK) bi-layer logic devices and to investigate the kinetics of forming and switching operations of Hf-based RRAM memories. Simulation results provide a deep and quantitative understanding of the factors controlling device operation and reliability. The proposed multiscale modeling platform represents a powerful tool for investigating material properties and optimizing device performances and reliability.

Multiscale modeling of defect-related phenomena in high-k based logic and memory devices / Padovani, Andrea; Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo. - (2017), pp. 1-6. ((Intervento presentato al convegno IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) tenutosi a Chengdu, China nel 4-7 July 2017 [10.1109/IPFA.2017.8060063].

Multiscale modeling of defect-related phenomena in high-k based logic and memory devices

PADOVANI, ANDREA;LARCHER, Luca;PUGLISI, Francesco Maria;PAVAN, Paolo
2017

Abstract

We present a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, degradation and atomic species motion) to interpret the reliability and electrical characteristics of logic and memory devices. The model is used to identify and characterize the dielectric defects responsible for the charge transport and degradation in SiOx/high-k (HK) bi-layer logic devices and to investigate the kinetics of forming and switching operations of Hf-based RRAM memories. Simulation results provide a deep and quantitative understanding of the factors controlling device operation and reliability. The proposed multiscale modeling platform represents a powerful tool for investigating material properties and optimizing device performances and reliability.
IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Chengdu, China
4-7 July 2017
1
6
Padovani, Andrea; Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices / Padovani, Andrea; Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo. - (2017), pp. 1-6. ((Intervento presentato al convegno IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) tenutosi a Chengdu, China nel 4-7 July 2017 [10.1109/IPFA.2017.8060063].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1148055
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