The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile memory devices also in embedded products, owing to its intrinsic 2-b/cell operation and better endurance. However, the presence of physically sepa- rated electron and hole distributions generated by program and erase operations is reported to be one of the main causes of the device’s retention degradation. Therefore, a deep knowledge of the features and evolution of the nitride-storage charge is crucial for reliability, cell optimization, future scalability, and multilevel oper- ation. In this scenario, the purpose of this paper is twofold, which is as follows: 1) to introduce a combined simulative experimental method allowing profiling hole distribution in devices erased with different bias conditions and 2) to monitor through this technique the evolution of the nitride charge with cycling, correlating it to the degradation of memory reliability after cycling.

Hole Distributions in Erased NROM Devices: profiling method and effects on reliability / Padovani, Andrea; Larcher, Luca; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 55:(2008), pp. 343-348. [10.1109/TED.2007.910572]

Hole Distributions in Erased NROM Devices: profiling method and effects on reliability

PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo
2008

Abstract

The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile memory devices also in embedded products, owing to its intrinsic 2-b/cell operation and better endurance. However, the presence of physically sepa- rated electron and hole distributions generated by program and erase operations is reported to be one of the main causes of the device’s retention degradation. Therefore, a deep knowledge of the features and evolution of the nitride-storage charge is crucial for reliability, cell optimization, future scalability, and multilevel oper- ation. In this scenario, the purpose of this paper is twofold, which is as follows: 1) to introduce a combined simulative experimental method allowing profiling hole distribution in devices erased with different bias conditions and 2) to monitor through this technique the evolution of the nitride charge with cycling, correlating it to the degradation of memory reliability after cycling.
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Hole Distributions in Erased NROM Devices: profiling method and effects on reliability / Padovani, Andrea; Larcher, Luca; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 55:(2008), pp. 343-348. [10.1109/TED.2007.910572]
Padovani, Andrea; Larcher, Luca; Pavan, Paolo
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/612708
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