The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage

New insights into SILC-based life time extraction / Young, C. D.; Bersuker, G.; Jo, M.; Matthews, K.; Huang, J.; Deora, S.; Ang, K. W.; Ngai, T.; Hobbs, C.; Kirsch, P. D.; Padovani, A.; Larcher, Luca. - Article number 6241854:(2012), p. 5D.3.5. (Intervento presentato al convegno 2012 IEEE International Reliability Physics Symposium, IRPS 2012 tenutosi a Anaheim, CA, usa nel 15/04/2012) [10.1109/IRPS.2012.6241854].

New insights into SILC-based life time extraction

Padovani, A.;LARCHER, Luca
2012

Abstract

The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage
2012
2012 IEEE International Reliability Physics Symposium, IRPS 2012
Anaheim, CA, usa
15/04/2012
Article number 6241854
5D.3.5
Young, C. D.; Bersuker, G.; Jo, M.; Matthews, K.; Huang, J.; Deora, S.; Ang, K. W.; Ngai, T.; Hobbs, C.; Kirsch, P. D.; Padovani, A.; Larcher, Luca...espandi
New insights into SILC-based life time extraction / Young, C. D.; Bersuker, G.; Jo, M.; Matthews, K.; Huang, J.; Deora, S.; Ang, K. W.; Ngai, T.; Hobbs, C.; Kirsch, P. D.; Padovani, A.; Larcher, Luca. - Article number 6241854:(2012), p. 5D.3.5. (Intervento presentato al convegno 2012 IEEE International Reliability Physics Symposium, IRPS 2012 tenutosi a Anaheim, CA, usa nel 15/04/2012) [10.1109/IRPS.2012.6241854].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1076384
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