We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.
On the RESET-SET transition in Phase Change Memories / G., Puzzilli; F., Irrera; Padovani, Andrea; Pavan, Paolo; Larcher, Luca; A., Arya; DELLA MARCA, Vincenzo; A., Pirovano. - STAMPA. - (2008), pp. 158-161. (Intervento presentato al convegno ESSDERC 2008 - 38th European Solid-State Device Research Conference tenutosi a Edinburgh, Scotland, gbr nel 15-19 Sept. 2008) [10.1109/ESSDERC.2008.4681723].
On the RESET-SET transition in Phase Change Memories
PADOVANI, ANDREA;PAVAN, Paolo;LARCHER, Luca;DELLA MARCA, Vincenzo;
2008
Abstract
We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.
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