In this paper we explore the features of complex anomalous Random Telegraph Noise (aRTN) in TiN/Ti/HfO2/TiN Resistive Random Access Memory (RRAM) devices. Careful design of experiment, dedicated characterization techniques, and physics-based simulations are exploited to gain insights into the physics of this phenomenon. The RTN parameters (amplitude of the current fluctuations, capture and emission times) observed in the experiments are analyzed in a variety of operating conditions. Anomalous behaviors are examined and their statistical characteristics are analyzed. Physics-based simulations taking into account both the Coulomb interactions among different defects in the device and the possibility for defects to show metastable states are exploited to suggest a possible origin of the aRTN. Results highlight the importance of the electrostatic interactions among individual defects and the trapped charge.
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory / Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo. - STAMPA. - (2015), pp. 270-273. (Intervento presentato al convegno 45th European Solid State Device Research Conference (ESSDERC) tenutosi a Graz (A) nel 14-18 September 2015) [10.1109/ESSDERC.2015.7324766].