The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material-to-device multiscale technique, we propose a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. Our metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material-device co-design and the optimization of novel technologies.

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors / Slassi, Amine; Medondjio, Linda‐sheila; Padovani, Andrea; Tavanti, Francesco; He, Xu; Clima, Sergiu; Garbin, Daniele; Kaczer, Ben; Larcher, Luca; Ordejón, Pablo; Calzolari, Arrigo. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - 9:4(2023), pp. 2201224-2201224. [10.1002/aelm.202201224]

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Padovani, Andrea;Tavanti, Francesco;Larcher, Luca;Calzolari, Arrigo
2023

Abstract

The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material-to-device multiscale technique, we propose a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. Our metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material-device co-design and the optimization of novel technologies.
2023
7-feb-2023
9
4
2201224
2201224
Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors / Slassi, Amine; Medondjio, Linda‐sheila; Padovani, Andrea; Tavanti, Francesco; He, Xu; Clima, Sergiu; Garbin, Daniele; Kaczer, Ben; Larcher, Luca; Ordejón, Pablo; Calzolari, Arrigo. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - 9:4(2023), pp. 2201224-2201224. [10.1002/aelm.202201224]
Slassi, Amine; Medondjio, Linda‐sheila; Padovani, Andrea; Tavanti, Francesco; He, Xu; Clima, Sergiu; Garbin, Daniele; Kaczer, Ben; Larcher, Luca; Orde...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1296725
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