In this letter, we present a compact model of NAND Flash memory strings for circuit simulation purposes. This model is modular and easy to be implemented, and its parameters can be extracted through a simple procedure. It allows accurate simula- tion of NAND Flash memories with a limited computational effort, taking into account capacitive coupling effects which will become extremely important in future technology generations. This model is a very valuable tool for IC designers to optimize NVM circuits, particularly in multilevel applications.

Modeling NAND Flash Memories for IC Design / Larcher, Luca; Padovani, Andrea; Pavan, Paolo; P., Fantini; A., Calderoni; A., Mauri; A., Benvenuti. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 29(10):(2008), pp. 1152-1154.

Modeling NAND Flash Memories for IC Design

LARCHER, Luca;PADOVANI, ANDREA;PAVAN, Paolo;
2008-01-01

Abstract

In this letter, we present a compact model of NAND Flash memory strings for circuit simulation purposes. This model is modular and easy to be implemented, and its parameters can be extracted through a simple procedure. It allows accurate simula- tion of NAND Flash memories with a limited computational effort, taking into account capacitive coupling effects which will become extremely important in future technology generations. This model is a very valuable tool for IC designers to optimize NVM circuits, particularly in multilevel applications.
29(10)
1152
1154
Modeling NAND Flash Memories for IC Design / Larcher, Luca; Padovani, Andrea; Pavan, Paolo; P., Fantini; A., Calderoni; A., Mauri; A., Benvenuti. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 29(10):(2008), pp. 1152-1154.
Larcher, Luca; Padovani, Andrea; Pavan, Paolo; P., Fantini; A., Calderoni; A., Mauri; A., Benvenuti
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/608762
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