The purpose of this work is to investigate the physics of electron/hole trapping/detrapping mechanisms in Al2O3. Combining I-V and C-V measurements with a physical model we derive the energy levels of electron/hole traps and the location of electron/hole charge. The influence of electron/hole alumina traps on TANOS operations and reliability is investigated.
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations / Larcher, Luca; Padovani, Andrea; Vincenzo della, Marca; Pavan, Paolo; Bertacchini, Alessandro. - STAMPA. - (2010), pp. 52-53. ((Intervento presentato al convegno 2010 International Symposium on VLSI Technology, System and Applications tenutosi a Hsinchu, Taiwan nel April 26-28, 2010 [10.1109/VTSA.2010.5488951].
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations
LARCHER, Luca;PADOVANI, ANDREA;PAVAN, Paolo;BERTACCHINI, Alessandro
2010-01-01
Abstract
The purpose of this work is to investigate the physics of electron/hole trapping/detrapping mechanisms in Al2O3. Combining I-V and C-V measurements with a physical model we derive the energy levels of electron/hole traps and the location of electron/hole charge. The influence of electron/hole alumina traps on TANOS operations and reliability is investigated.
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VLSI-TSA 2010 draft_final.pdf
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