PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 20.632
EU - Europa 5.722
AS - Asia 3.317
SA - Sud America 19
Continente sconosciuto - Info sul continente non disponibili 14
OC - Oceania 13
AF - Africa 11
Totale 29.728
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Nazione #
US - Stati Uniti d'America 20.611
GB - Regno Unito 2.165
SG - Singapore 1.153
HK - Hong Kong 902
DE - Germania 756
CN - Cina 732
IT - Italia 681
UA - Ucraina 608
SE - Svezia 484
TR - Turchia 374
IE - Irlanda 294
BG - Bulgaria 238
FI - Finlandia 110
FR - Francia 86
LT - Lituania 61
IN - India 48
RU - Federazione Russa 48
NL - Olanda 44
ID - Indonesia 30
BE - Belgio 26
CH - Svizzera 26
JP - Giappone 23
AT - Austria 19
CA - Canada 19
GR - Grecia 14
KR - Corea 11
AU - Australia 10
PT - Portogallo 10
BR - Brasile 9
CZ - Repubblica Ceca 9
RO - Romania 9
TW - Taiwan 9
VN - Vietnam 9
A2 - ???statistics.table.value.countryCode.A2??? 8
MY - Malesia 8
HR - Croazia 7
IR - Iran 7
ES - Italia 6
EU - Europa 6
CL - Cile 4
DK - Danimarca 4
DZ - Algeria 4
MK - Macedonia 4
PE - Perù 4
PL - Polonia 4
TN - Tunisia 4
EG - Egitto 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
AE - Emirati Arabi Uniti 2
IL - Israele 2
BA - Bosnia-Erzegovina 1
EC - Ecuador 1
FK - Isole Falkland (Malvinas) 1
HU - Ungheria 1
IQ - Iraq 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MD - Moldavia 1
MX - Messico 1
NP - Nepal 1
PA - Panama 1
PH - Filippine 1
SA - Arabia Saudita 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 29.728
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Città #
Fairfield 3.705
Ashburn 1.934
Southend 1.862
Woodbridge 1.634
Seattle 1.426
Houston 1.404
Santa Clara 1.272
Chandler 1.194
Cambridge 1.177
Dearborn 1.144
Wilmington 1.113
Singapore 1.006
Jacksonville 981
Hong Kong 895
Ann Arbor 497
Izmir 367
Nyköping 293
Dublin 286
San Diego 271
Princeton 241
Sofia 238
Beijing 232
Eugene 225
New York 118
Modena 117
Washington 114
Helsinki 94
London 86
Bremen 80
Falls Church 67
Nanjing 60
Bologna 49
Milan 45
Norwalk 45
Shanghai 38
Kilburn 35
Hefei 32
Boardman 30
Kunming 29
Amsterdam 28
Dallas 28
Jakarta 27
Udine 26
Guangzhou 22
Jinan 21
Chiswick 20
Reggio Emilia 20
Redwood City 19
Hounslow 18
Chicago 16
Frankfurt am Main 16
Fuzhou 16
Prescot 16
Lappeenranta 15
Nanchang 15
Paris 15
San Francisco 14
Trieste 13
Zurich 13
Des Moines 12
Orsay 11
Brussels 9
Ottawa 9
Providence 9
Tokyo 9
Dong Ket 8
Munich 8
Southwark 8
Baotou 7
Changsha 7
Chengdu 7
Grafing 7
Hebei 7
Kuala Lumpur 7
Toronto 7
Wandsworth 7
Zagreb 7
Clearwater 6
Cork 6
Hangzhou 6
Heverlee 6
Kalyani 6
Los Angeles 6
Parma 6
Ravenna 6
Serra 6
Taipei 6
Verona 6
Acton 5
Jiaxing 5
Kochi 5
Nanning 5
Olomouc 5
Padova 5
Roorkee 5
Ruvo Di Puglia 5
Shaoxing 5
Shenzhen 5
Suita 5
São Paulo 5
Totale 25.086
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Nome #
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 222
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 215
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 199
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 195
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 193
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 189
Impact Ionization and Photon Emission in MOS Capacitors and FETs 184
Impact of carrier heating on backscattering in inversion layers 184
Relationship between capacitance and conductance in MOS capacitors 180
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 179
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 177
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 175
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 175
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 172
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 172
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 171
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 168
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 168
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 167
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 167
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 166
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 165
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 165
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 164
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 162
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 161
A design methodology for MOS Current-Mode Logic Frequency Dividers 161
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 160
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 157
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 157
Tunneling path impact on semi-classical numerical simulations of TFET devices 156
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 156
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 154
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 154
Device simulation for decananometer MOSFETs 154
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 154
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 153
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 153
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 152
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 152
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 152
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 151
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 150
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 150
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 149
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 149
Modeling electrostatic doping and series resistance in graphene-FETs 148
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 148
Simulation of DC and RF Performance of the Graphene Base Transistor 147
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 147
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 147
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 147
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 147
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 147
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 147
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 147
On the Apparent Mobility in Nanometric n-MOSFETs 146
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 146
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 145
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 145
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 144
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 144
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 144
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 144
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 143
Graphene Base Transistors with optimized emitter and dielectrics 143
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 143
Semi-analytic Modeling for Hot Carriers in Electron Devices 143
General model for multiple surface reactions in ion-sensitive FETs 143
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 142
On the experimental determination of channel back-scattering in nanoMOSFETs 142
A better understanding of the low-field mobility in Graphene Nano-ribbons 142
Modeling charge collection in x-ray imagers 142
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 142
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 141
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 141
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 141
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 140
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 140
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 140
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology 140
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 140
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 140
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 140
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 138
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 138
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 138
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 138
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 138
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 137
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 137
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 137
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 136
Total Ionizing Dose Effects in Si-Based Tunnel FETs 136
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 136
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 135
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 135
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 135
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 135
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 135
Totale 15.351
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Categoria #
all - tutte 153.136
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 153.136
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20206.046 0 0 0 0 883 1.337 1.387 774 718 297 455 195
2020/20216.403 637 304 557 526 491 497 612 965 257 918 310 329
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.198 128 188 129 315 772 530 308 297 56 53 186 236
2024/20252.706 359 101 94 716 1.436 0 0 0 0 0 0 0
Totale 30.212