PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 22.157
EU - Europa 5.735
AS - Asia 3.336
SA - Sud America 20
Continente sconosciuto - Info sul continente non disponibili 14
OC - Oceania 13
AF - Africa 11
Totale 31.286
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Nazione #
US - Stati Uniti d'America 22.136
GB - Regno Unito 2.165
SG - Singapore 1.162
HK - Hong Kong 907
DE - Germania 757
CN - Cina 732
IT - Italia 682
UA - Ucraina 609
SE - Svezia 483
TR - Turchia 374
IE - Irlanda 294
BG - Bulgaria 238
FI - Finlandia 111
FR - Francia 86
LT - Lituania 61
RU - Federazione Russa 49
IN - India 48
NL - Olanda 48
ID - Indonesia 30
CH - Svizzera 28
BE - Belgio 26
JP - Giappone 25
AT - Austria 19
CA - Canada 19
GR - Grecia 14
KR - Corea 12
AU - Australia 10
PT - Portogallo 10
BR - Brasile 9
CZ - Repubblica Ceca 9
RO - Romania 9
TW - Taiwan 9
VN - Vietnam 9
A2 - ???statistics.table.value.countryCode.A2??? 8
MY - Malesia 8
ES - Italia 7
HR - Croazia 7
IR - Iran 7
EU - Europa 6
CL - Cile 4
DK - Danimarca 4
DZ - Algeria 4
MK - Macedonia 4
NO - Norvegia 4
PE - Perù 4
PL - Polonia 4
TN - Tunisia 4
EG - Egitto 3
IL - Israele 3
NZ - Nuova Zelanda 3
AE - Emirati Arabi Uniti 2
SK - Slovacchia (Repubblica Slovacca) 2
AR - Argentina 1
BA - Bosnia-Erzegovina 1
EC - Ecuador 1
FK - Isole Falkland (Malvinas) 1
HU - Ungheria 1
IQ - Iraq 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MD - Moldavia 1
MX - Messico 1
NP - Nepal 1
PA - Panama 1
PH - Filippine 1
SA - Arabia Saudita 1
SI - Slovenia 1
Totale 31.286
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Città #
Fairfield 3.705
Santa Clara 2.750
Ashburn 1.935
Southend 1.862
Woodbridge 1.634
Seattle 1.426
Houston 1.404
Chandler 1.194
Cambridge 1.177
Dearborn 1.144
Wilmington 1.113
Singapore 1.014
Jacksonville 981
Hong Kong 899
Ann Arbor 497
Izmir 367
Nyköping 293
Dublin 286
San Diego 271
Princeton 241
Sofia 238
Beijing 232
Eugene 225
New York 118
Modena 117
Washington 114
Helsinki 95
London 86
Bremen 80
Falls Church 67
Nanjing 60
Bologna 49
Milan 45
Norwalk 45
Shanghai 38
Kilburn 35
Hefei 32
Amsterdam 30
Boardman 30
Kunming 29
Dallas 28
Jakarta 27
Udine 26
Guangzhou 22
Jinan 21
Chiswick 20
Reggio Emilia 20
Redwood City 19
Hounslow 18
Chicago 16
Frankfurt am Main 16
Fuzhou 16
Prescot 16
Lappeenranta 15
Nanchang 15
Paris 15
Los Angeles 14
San Francisco 14
Zurich 14
Trieste 13
Des Moines 12
Orsay 11
Portland 11
Brussels 9
Ottawa 9
Providence 9
Tokyo 9
Dong Ket 8
Munich 8
Southwark 8
Baotou 7
Changsha 7
Grafing 7
Hebei 7
Kuala Lumpur 7
Toronto 7
Wandsworth 7
Zagreb 7
Chengdu 6
Clearwater 6
Cork 6
Hangzhou 6
Heverlee 6
Kalyani 6
Parma 6
Ravenna 6
Serra 6
Taipei 6
Verona 6
Acton 5
Formigine 5
Jiaxing 5
Kochi 5
Nanning 5
Olomouc 5
Padova 5
Roorkee 5
Ruvo Di Puglia 5
Shaoxing 5
Shenzhen 5
Totale 26.594
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Nome #
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 230
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 221
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 205
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 201
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 199
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 195
Impact Ionization and Photon Emission in MOS Capacitors and FETs 191
Impact of carrier heating on backscattering in inversion layers 190
Relationship between capacitance and conductance in MOS capacitors 186
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 185
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 184
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 182
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 181
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 179
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 179
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 177
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 174
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 174
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 173
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 173
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 173
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 171
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 171
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 170
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 168
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 167
A design methodology for MOS Current-Mode Logic Frequency Dividers 167
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 166
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 163
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 163
Tunneling path impact on semi-classical numerical simulations of TFET devices 162
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 162
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 162
Device simulation for decananometer MOSFETs 161
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 160
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 160
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 160
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 159
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 159
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 158
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 158
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 157
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 156
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 156
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 155
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 155
Modeling electrostatic doping and series resistance in graphene-FETs 154
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 154
Simulation of DC and RF Performance of the Graphene Base Transistor 153
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 153
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 153
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 153
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 153
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 153
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 153
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 153
On the Apparent Mobility in Nanometric n-MOSFETs 152
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 152
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 151
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 151
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 151
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 150
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 150
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 150
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 149
On the experimental determination of channel back-scattering in nanoMOSFETs 149
Graphene Base Transistors with optimized emitter and dielectrics 149
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 149
Semi-analytic Modeling for Hot Carriers in Electron Devices 149
General model for multiple surface reactions in ion-sensitive FETs 149
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 149
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 148
A better understanding of the low-field mobility in Graphene Nano-ribbons 148
Modeling charge collection in x-ray imagers 148
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 148
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 147
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 147
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 146
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 146
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 146
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology 146
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 146
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 146
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 146
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 144
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 144
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 144
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 144
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 144
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 144
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 143
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 143
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 142
Total Ionizing Dose Effects in Si-Based Tunnel FETs 142
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 142
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 141
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 141
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 141
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 141
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 141
Totale 15.969
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Categoria #
all - tutte 157.234
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 157.234
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20205.163 0 0 0 0 0 1.337 1.387 774 718 297 455 195
2020/20216.403 637 304 557 526 491 497 612 965 257 918 310 329
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/20254.270 359 101 94 714 1.992 1.010 0 0 0 0 0 0
Totale 31.771