PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 26.502
AS - Asia 10.802
EU - Europa 8.466
SA - Sud America 1.511
AF - Africa 131
Continente sconosciuto - Info sul continente non disponibili 16
OC - Oceania 15
Totale 47.443
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Nazione #
US - Stati Uniti d'America 26.344
CN - Cina 3.661
SG - Singapore 3.169
GB - Regno Unito 2.925
HK - Hong Kong 2.170
BR - Brasile 1.265
IT - Italia 851
DE - Germania 848
PL - Polonia 748
UA - Ucraina 658
SE - Svezia 644
RU - Federazione Russa 528
VN - Vietnam 454
TR - Turchia 401
KR - Corea 379
IE - Irlanda 298
BG - Bulgaria 241
NL - Olanda 142
FI - Finlandia 131
FR - Francia 120
IN - India 119
AR - Argentina 92
ID - Indonesia 86
LT - Lituania 69
JP - Giappone 67
CA - Canada 66
BD - Bangladesh 63
MX - Messico 57
AT - Austria 53
IQ - Iraq 45
EC - Ecuador 44
ES - Italia 41
ZA - Sudafrica 41
CH - Svizzera 31
PK - Pakistan 30
TW - Taiwan 30
BE - Belgio 29
VE - Venezuela 23
CL - Cile 20
PY - Paraguay 20
CO - Colombia 19
MA - Marocco 19
RO - Romania 16
CZ - Repubblica Ceca 15
GR - Grecia 15
PT - Portogallo 15
EG - Egitto 14
JO - Giordania 14
TN - Tunisia 14
UZ - Uzbekistan 13
AU - Australia 12
JM - Giamaica 11
AE - Emirati Arabi Uniti 10
DZ - Algeria 10
IR - Iran 10
NP - Nepal 10
PE - Perù 10
SA - Arabia Saudita 10
HR - Croazia 9
MY - Malesia 9
UY - Uruguay 9
A2 - ???statistics.table.value.countryCode.A2??? 8
IL - Israele 8
KE - Kenya 8
BO - Bolivia 7
AM - Armenia 6
EU - Europa 6
NO - Norvegia 6
OM - Oman 6
AL - Albania 5
MK - Macedonia 5
DK - Danimarca 4
ET - Etiopia 4
PA - Panama 4
PH - Filippine 4
SK - Slovacchia (Repubblica Slovacca) 4
SN - Senegal 4
AZ - Azerbaigian 3
BA - Bosnia-Erzegovina 3
CR - Costa Rica 3
HN - Honduras 3
KZ - Kazakistan 3
LA - Repubblica Popolare Democratica del Laos 3
NZ - Nuova Zelanda 3
TT - Trinidad e Tobago 3
AO - Angola 2
BH - Bahrain 2
CI - Costa d'Avorio 2
CM - Camerun 2
CV - Capo Verde 2
GT - Guatemala 2
KG - Kirghizistan 2
KH - Cambogia 2
KW - Kuwait 2
LB - Libano 2
LU - Lussemburgo 2
LV - Lettonia 2
MD - Moldavia 2
PS - Palestinian Territory 2
RS - Serbia 2
Totale 47.410
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Città #
Fairfield 3.706
Santa Clara 2.771
Ashburn 2.209
Hong Kong 2.161
Singapore 2.161
Southend 1.862
Hefei 1.769
Woodbridge 1.634
Seattle 1.442
Houston 1.422
Chandler 1.194
Cambridge 1.177
Dearborn 1.144
Wilmington 1.140
Jacksonville 990
London 804
Warsaw 739
Ann Arbor 497
Beijing 463
Chicago 419
Izmir 367
Seoul 364
Los Angeles 362
Nyköping 293
Dublin 289
San Diego 274
Princeton 241
Sofia 239
Eugene 226
Council Bluffs 223
New York 198
The Dalles 183
Moscow 169
Salt Lake City 153
Buffalo 152
Ho Chi Minh City 151
Modena 131
Washington 116
Hanoi 112
Helsinki 108
Shanghai 108
São Paulo 102
Amsterdam 101
Redondo Beach 99
Dallas 98
Kent 97
Bremen 80
Tampa 76
Bologna 68
Milan 68
Falls Church 67
Frankfurt am Main 66
Nanjing 62
Jakarta 59
Elk Grove Village 58
Atlanta 57
Rio de Janeiro 48
Guangzhou 47
San Francisco 47
Norwalk 45
Tokyo 40
Phoenix 39
Kilburn 35
Brooklyn 34
Kunming 33
Miami 33
Boardman 30
Belo Horizonte 29
Changsha 27
Denver 27
Udine 27
Jinan 26
Munich 26
Columbus 24
Reggio Emilia 24
Boston 22
Detroit 22
Paris 22
Montreal 21
Taipei 21
Vienna 21
Chiswick 20
Fuzhou 20
Sterling 20
Lancaster 19
Nuremberg 19
Quito 19
Redwood City 19
Hounslow 18
Jersey City 18
Lappeenranta 18
Las Vegas 18
Misano Adriatico 18
Porto Alegre 18
San Jose 18
Brasília 17
Campinas 17
Charlotte 17
Des Moines 17
Dulles 17
Totale 36.438
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 546
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 434
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 376
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 315
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 291
Impact Ionization and Photon Emission in MOS Capacitors and FETs 274
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 253
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 252
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 252
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 250
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 248
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 246
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 245
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 243
A design methodology for MOS Current-Mode Logic Frequency Dividers 236
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 233
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 233
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 232
Device simulation for decananometer MOSFETs 229
Relationship between capacitance and conductance in MOS capacitors 229
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 229
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 224
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 223
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 222
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 222
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 222
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 221
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 220
A better understanding of the low-field mobility in Graphene Nano-ribbons 219
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 218
Impact of carrier heating on backscattering in inversion layers 215
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 212
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 210
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 207
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 207
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 207
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 206
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 204
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 202
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 202
Tunneling path impact on semi-classical numerical simulations of TFET devices 201
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 201
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 201
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 201
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 199
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 199
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 199
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 198
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 195
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 194
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 192
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 192
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 191
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 191
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 190
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 190
On the experimental determination of channel back-scattering in nanoMOSFETs 189
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 189
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 189
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 187
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 187
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 186
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 186
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 186
Simulation of DC and RF Performance of the Graphene Base Transistor 185
On the Apparent Mobility in Nanometric n-MOSFETs 185
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 185
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 184
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 184
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 184
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 184
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 184
Tunnelling Injection in Thin Oxide MOS Capacitors 184
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 183
Modeling electrostatic doping and series resistance in graphene-FETs 183
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology 183
Graphene Base Transistors with optimized emitter and dielectrics 183
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 183
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 183
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 182
General model for multiple surface reactions in ion-sensitive FETs 182
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 181
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 181
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 181
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 181
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 180
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 180
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 179
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 178
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 178
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 177
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 177
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 177
Ultra-High Frequency (500 MHz) Capacitance Spectroscopy for Nanobiosensing 177
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 176
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 176
Total Ionizing Dose Effects in Si-Based Tunnel FETs 175
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 175
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 175
Semi-analytic Modeling for Hot Carriers in Electron Devices 175
Totale 21.042
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Categoria #
all - tutte 220.154
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 220.154
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.888 0 0 0 0 0 497 612 965 257 918 310 329
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/202510.541 359 101 94 714 1.992 1.493 252 479 1.169 751 1.393 1.744
2025/20269.897 1.080 847 1.864 1.593 2.196 2.317 0 0 0 0 0 0
Totale 47.939