PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 19.224
EU - Europa 5.522
AS - Asia 1.944
SA - Sud America 19
Continente sconosciuto - Info sul continente non disponibili 14
OC - Oceania 12
AF - Africa 10
Totale 26.745
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Nazione #
US - Stati Uniti d'America 19.203
GB - Regno Unito 2.163
HK - Hong Kong 901
DE - Germania 748
UA - Ucraina 604
IT - Italia 569
CN - Cina 542
SE - Svezia 462
TR - Turchia 374
IE - Irlanda 293
BG - Bulgaria 238
FI - Finlandia 101
FR - Francia 85
LT - Lituania 59
RU - Federazione Russa 47
IN - India 46
BE - Belgio 26
CH - Svizzera 25
JP - Giappone 20
CA - Canada 19
NL - Olanda 17
AT - Austria 16
GR - Grecia 13
KR - Corea 11
PT - Portogallo 10
AU - Australia 9
BR - Brasile 9
RO - Romania 9
VN - Vietnam 9
A2 - ???statistics.table.value.countryCode.A2??? 8
TW - Taiwan 8
HR - Croazia 7
IR - Iran 7
MY - Malesia 7
EU - Europa 6
SG - Singapore 6
ES - Italia 5
CL - Cile 4
CZ - Repubblica Ceca 4
DK - Danimarca 4
DZ - Algeria 4
MK - Macedonia 4
PE - Perù 4
PL - Polonia 4
TN - Tunisia 4
NO - Norvegia 3
NZ - Nuova Zelanda 3
AE - Emirati Arabi Uniti 2
EG - Egitto 2
ID - Indonesia 2
IL - Israele 2
BA - Bosnia-Erzegovina 1
EC - Ecuador 1
FK - Isole Falkland (Malvinas) 1
HU - Ungheria 1
IQ - Iraq 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MD - Moldavia 1
MX - Messico 1
NP - Nepal 1
PA - Panama 1
PH - Filippine 1
SA - Arabia Saudita 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 26.745
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Città #
Fairfield 3.705
Ashburn 1.915
Southend 1.862
Woodbridge 1.634
Seattle 1.426
Houston 1.404
Chandler 1.194
Cambridge 1.177
Dearborn 1.144
Wilmington 1.113
Jacksonville 981
Hong Kong 894
Ann Arbor 497
Izmir 367
Nyköping 293
Dublin 285
San Diego 271
Princeton 241
Sofia 238
Eugene 225
Beijing 219
New York 117
Modena 115
Washington 113
Helsinki 90
London 85
Bremen 80
Falls Church 67
Nanjing 57
Norwalk 45
Kilburn 35
Milan 35
Bologna 32
Hefei 32
Boardman 28
Kunming 27
Udine 23
Jinan 21
Chiswick 20
Redwood City 19
Hounslow 18
Fuzhou 16
Prescot 16
Nanchang 15
Paris 15
Chicago 14
Frankfurt am Main 14
San Francisco 14
Trieste 13
Des Moines 12
Guangzhou 12
Zurich 12
Orsay 11
Lappeenranta 10
Reggio Emilia 10
Brussels 9
Ottawa 9
Providence 9
Dong Ket 8
Shanghai 8
Southwark 8
Baotou 7
Grafing 7
Hebei 7
Toronto 7
Wandsworth 7
Zagreb 7
Chengdu 6
Clearwater 6
Cork 6
Heverlee 6
Kalyani 6
Kuala Lumpur 6
Los Angeles 6
Parma 6
Ravenna 6
Serra 6
Taipei 6
Tokyo 6
Verona 6
Acton 5
Changsha 5
Hangzhou 5
Kochi 5
Nanning 5
Padova 5
Roorkee 5
Ruvo Di Puglia 5
Shaoxing 5
Suita 5
São Paulo 5
Torre Del Greco 5
Assago 4
Einsiedeln 4
Formigine 4
Gif-sur-yvette 4
Kemerovo 4
Lima 4
Montale 4
Munich 4
Totale 22.591
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Nome #
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 212
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 203
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 186
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 182
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 180
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 179
Impact of carrier heating on backscattering in inversion layers 175
Impact Ionization and Photon Emission in MOS Capacitors and FETs 174
Relationship between capacitance and conductance in MOS capacitors 169
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 165
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 165
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 164
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 161
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 161
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 159
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 158
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 158
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 156
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 156
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 155
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 155
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 154
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 153
A design methodology for MOS Current-Mode Logic Frequency Dividers 152
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 151
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 151
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 149
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 148
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 148
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 147
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 146
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 145
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 144
Device simulation for decananometer MOSFETs 144
Tunneling path impact on semi-classical numerical simulations of TFET devices 143
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 143
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 143
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 142
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 142
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 142
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 142
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 142
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 141
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 140
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 139
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 139
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 139
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 139
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 138
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 138
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 138
Modeling electrostatic doping and series resistance in graphene-FETs 137
On the Apparent Mobility in Nanometric n-MOSFETs 137
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 137
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 137
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 137
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 137
Simulation of DC and RF Performance of the Graphene Base Transistor 136
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 135
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 135
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 135
Graphene Base Transistors with optimized emitter and dielectrics 134
Semi-analytic Modeling for Hot Carriers in Electron Devices 134
Modeling charge collection in x-ray imagers 134
On the experimental determination of channel back-scattering in nanoMOSFETs 133
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 133
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 133
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 131
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 131
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 131
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 131
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 131
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 131
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 131
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 131
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 130
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 129
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 129
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 129
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 129
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology 129
A better understanding of the low-field mobility in Graphene Nano-ribbons 129
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 129
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 128
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 128
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 128
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 128
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 128
General model for multiple surface reactions in ion-sensitive FETs 128
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 128
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 127
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 127
Total Ionizing Dose Effects in Si-Based Tunnel FETs 126
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 126
Digital and analog TFET circuits: Design and benchmark 126
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 126
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 125
Energy Dependent Electron and Hole Impact Ionization in Si Bipolar Transistors 125
Phonon Limited Uniform Transport in Bilayer Graphene Transistors 125
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 124
Totale 14.293
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Categoria #
all - tutte 125.640
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 125.640
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.944 0 0 0 0 0 0 0 0 0 0 930 1.014
2019/20207.359 486 189 143 495 883 1.337 1.387 774 718 297 455 195
2020/20216.403 637 304 557 526 491 497 612 965 257 918 310 329
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20242.920 128 188 129 315 772 530 308 297 56 53 144 0
Totale 27.228