PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 25.650
AS - Asia 10.483
EU - Europa 7.709
SA - Sud America 1.483
AF - Africa 125
Continente sconosciuto - Info sul continente non disponibili 16
OC - Oceania 15
Totale 45.481
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Nazione #
US - Stati Uniti d'America 25.498
CN - Cina 3.582
SG - Singapore 2.987
GB - Regno Unito 2.924
HK - Hong Kong 2.163
BR - Brasile 1.248
DE - Germania 847
IT - Italia 843
UA - Ucraina 650
SE - Svezia 643
RU - Federazione Russa 528
VN - Vietnam 424
TR - Turchia 401
KR - Corea 379
IE - Irlanda 298
BG - Bulgaria 241
FI - Finlandia 130
NL - Olanda 127
FR - Francia 119
IN - India 116
AR - Argentina 88
ID - Indonesia 85
LT - Lituania 69
CA - Canada 64
JP - Giappone 64
BD - Bangladesh 62
MX - Messico 57
AT - Austria 52
EC - Ecuador 44
IQ - Iraq 42
ES - Italia 39
ZA - Sudafrica 39
PL - Polonia 32
CH - Svizzera 31
PK - Pakistan 30
BE - Belgio 29
TW - Taiwan 27
VE - Venezuela 21
CL - Cile 19
MA - Marocco 19
PY - Paraguay 19
CO - Colombia 18
RO - Romania 16
CZ - Repubblica Ceca 15
GR - Grecia 15
PT - Portogallo 15
EG - Egitto 14
TN - Tunisia 14
JO - Giordania 13
UZ - Uzbekistan 13
AU - Australia 12
DZ - Algeria 10
IR - Iran 10
JM - Giamaica 10
NP - Nepal 10
PE - Perù 10
SA - Arabia Saudita 10
HR - Croazia 9
MY - Malesia 9
A2 - ???statistics.table.value.countryCode.A2??? 8
AE - Emirati Arabi Uniti 8
KE - Kenya 8
UY - Uruguay 8
AM - Armenia 6
BO - Bolivia 6
EU - Europa 6
IL - Israele 6
OM - Oman 6
MK - Macedonia 5
NO - Norvegia 5
AL - Albania 4
DK - Danimarca 4
PH - Filippine 4
SK - Slovacchia (Repubblica Slovacca) 4
AZ - Azerbaigian 3
BA - Bosnia-Erzegovina 3
ET - Etiopia 3
HN - Honduras 3
KZ - Kazakistan 3
LA - Repubblica Popolare Democratica del Laos 3
NZ - Nuova Zelanda 3
PA - Panama 3
SN - Senegal 3
TT - Trinidad e Tobago 3
BH - Bahrain 2
CI - Costa d'Avorio 2
CM - Camerun 2
CR - Costa Rica 2
CV - Capo Verde 2
GT - Guatemala 2
KG - Kirghizistan 2
KH - Cambogia 2
KW - Kuwait 2
LU - Lussemburgo 2
LV - Lettonia 2
MD - Moldavia 2
RS - Serbia 2
SY - Repubblica araba siriana 2
XK - ???statistics.table.value.countryCode.XK??? 2
AO - Angola 1
Totale 45.452
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Città #
Fairfield 3.706
Santa Clara 2.771
Ashburn 2.176
Hong Kong 2.154
Singapore 2.006
Southend 1.862
Hefei 1.769
Woodbridge 1.634
Seattle 1.440
Houston 1.414
Chandler 1.194
Cambridge 1.177
Dearborn 1.144
Wilmington 1.138
Jacksonville 984
London 804
Ann Arbor 497
Beijing 462
Izmir 367
Seoul 364
Los Angeles 328
Chicago 321
Nyköping 293
Dublin 289
San Diego 273
Princeton 241
Sofia 239
Eugene 225
Council Bluffs 223
New York 190
Moscow 169
Buffalo 152
Ho Chi Minh City 143
Modena 131
Salt Lake City 120
The Dalles 120
Washington 115
Helsinki 108
Shanghai 108
Hanoi 105
São Paulo 100
Redondo Beach 99
Kent 97
Dallas 90
Amsterdam 86
Bremen 80
Bologna 67
Falls Church 67
Milan 67
Frankfurt am Main 65
Nanjing 62
Jakarta 59
Elk Grove Village 48
Rio de Janeiro 47
Tampa 47
San Francisco 46
Norwalk 45
Guangzhou 43
Tokyo 38
Atlanta 36
Kilburn 35
Kunming 33
Phoenix 32
Boardman 30
Brooklyn 29
Belo Horizonte 28
Changsha 27
Udine 27
Jinan 26
Munich 26
Miami 25
Reggio Emilia 24
Columbus 23
Denver 23
Warsaw 23
Boston 21
Paris 21
Vienna 21
Chiswick 20
Fuzhou 20
Montreal 20
Nuremberg 19
Quito 19
Redwood City 19
Sterling 19
Hounslow 18
Lancaster 18
Misano Adriatico 18
Porto Alegre 18
Taipei 18
Brasília 17
Campinas 17
Des Moines 17
Lappeenranta 17
Zurich 17
Mexico City 16
Nanchang 16
Prescot 16
Stockholm 16
Trieste 16
Totale 35.110
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Nome #
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 314
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 283
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 272
Impact Ionization and Photon Emission in MOS Capacitors and FETs 269
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 250
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 249
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 249
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 247
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 242
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 242
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 235
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 229
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 228
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 228
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 227
Device simulation for decananometer MOSFETs 227
A design methodology for MOS Current-Mode Logic Frequency Dividers 227
Relationship between capacitance and conductance in MOS capacitors 227
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 221
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 219
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 218
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 218
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 216
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 215
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 214
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 212
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 211
Impact of carrier heating on backscattering in inversion layers 211
A better understanding of the low-field mobility in Graphene Nano-ribbons 210
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 204
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 203
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 202
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 201
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 201
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 199
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 199
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 198
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 198
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 198
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 196
Tunneling path impact on semi-classical numerical simulations of TFET devices 194
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 194
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 194
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 193
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 192
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 192
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 190
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 190
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 189
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 188
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 187
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 187
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 186
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 185
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 185
On the experimental determination of channel back-scattering in nanoMOSFETs 184
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 184
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 184
Simulation of DC and RF Performance of the Graphene Base Transistor 183
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 183
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 183
Tunnelling Injection in Thin Oxide MOS Capacitors 183
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 182
General model for multiple surface reactions in ion-sensitive FETs 181
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 181
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 180
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 180
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 180
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 180
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 179
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 179
Modeling electrostatic doping and series resistance in graphene-FETs 179
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology 179
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 179
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 179
On the Apparent Mobility in Nanometric n-MOSFETs 178
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 178
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 178
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 178
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 176
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 176
Graphene Base Transistors with optimized emitter and dielectrics 176
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 176
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 175
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 175
Ultra-High Frequency (500 MHz) Capacitance Spectroscopy for Nanobiosensing 175
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 174
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 174
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 174
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 173
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 173
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 173
Total Ionizing Dose Effects in Si-Based Tunnel FETs 172
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 172
Modeling charge collection in x-ray imagers 172
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 172
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 171
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 171
Semi-analytic Modeling for Hot Carriers in Electron Devices 170
Physical Description of the Mixed-Mode Degradation Mechanism for High Performance Bipolar Transistors 169
Totale 19.828
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Categoria #
all - tutte 216.801
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 216.801
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.888 0 0 0 0 0 497 612 965 257 918 310 329
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/202510.541 359 101 94 714 1.992 1.493 252 479 1.169 751 1.393 1.744
2025/20267.935 1.080 847 1.864 1.593 2.196 355 0 0 0 0 0 0
Totale 45.977