PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 30.278
AS - Asia 14.361
EU - Europa 9.505
SA - Sud America 1.783
AF - Africa 229
OC - Oceania 20
Continente sconosciuto - Info sul continente non disponibili 18
Totale 56.194
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Nazione #
US - Stati Uniti d'America 29.958
SG - Singapore 4.181
CN - Cina 4.091
GB - Regno Unito 2.967
HK - Hong Kong 2.364
BR - Brasile 1.427
VN - Vietnam 1.407
IT - Italia 1.272
DE - Germania 890
PL - Polonia 753
UA - Ucraina 671
KR - Corea 668
SE - Svezia 646
RU - Federazione Russa 540
FR - Francia 431
TR - Turchia 422
IE - Irlanda 302
BD - Bangladesh 265
IN - India 246
BG - Bulgaria 245
FI - Finlandia 227
CA - Canada 170
NL - Olanda 170
AR - Argentina 126
ID - Indonesia 106
JP - Giappone 98
IQ - Iraq 97
MX - Messico 93
LT - Lituania 71
EC - Ecuador 61
PK - Pakistan 59
ES - Italia 58
ZA - Sudafrica 57
AT - Austria 51
AE - Emirati Arabi Uniti 45
TW - Taiwan 41
CO - Colombia 38
VE - Venezuela 36
PH - Filippine 34
BE - Belgio 33
MA - Marocco 33
CL - Cile 32
CH - Svizzera 31
TN - Tunisia 27
EG - Egitto 26
UZ - Uzbekistan 26
MY - Malesia 24
PY - Paraguay 24
JO - Giordania 23
NP - Nepal 22
PT - Portogallo 21
RO - Romania 21
SA - Arabia Saudita 21
DZ - Algeria 20
TH - Thailandia 20
GR - Grecia 19
AU - Australia 17
CZ - Repubblica Ceca 16
KE - Kenya 15
PE - Perù 15
JM - Giamaica 13
OM - Oman 13
UY - Uruguay 13
IR - Iran 10
AZ - Azerbaigian 9
BO - Bolivia 9
CR - Costa Rica 9
HR - Croazia 9
RS - Serbia 9
A2 - ???statistics.table.value.countryCode.A2??? 8
IL - Israele 8
SN - Senegal 8
AL - Albania 7
AM - Armenia 7
ET - Etiopia 7
KZ - Kazakistan 7
NO - Norvegia 7
SK - Slovacchia (Repubblica Slovacca) 7
EU - Europa 6
LB - Libano 6
AO - Angola 5
BH - Bahrain 5
CI - Costa d'Avorio 5
DK - Danimarca 5
DO - Repubblica Dominicana 5
HN - Honduras 5
MK - Macedonia 5
PS - Palestinian Territory 5
QA - Qatar 5
BB - Barbados 4
KH - Cambogia 4
NG - Nigeria 4
PA - Panama 4
PR - Porto Rico 4
TT - Trinidad e Tobago 4
XK - ???statistics.table.value.countryCode.XK??? 4
BA - Bosnia-Erzegovina 3
CY - Cipro 3
GH - Ghana 3
GT - Guatemala 3
Totale 56.127
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Città #
Fairfield 3.706
Ashburn 2.986
Santa Clara 2.839
Singapore 2.755
Hong Kong 2.323
Southend 1.862
Hefei 1.757
Woodbridge 1.634
San Jose 1.620
Seattle 1.445
Houston 1.429
Chandler 1.194
Cambridge 1.178
Dearborn 1.144
Wilmington 1.141
Jacksonville 993
London 808
Warsaw 745
Seoul 644
Beijing 527
Ann Arbor 497
Council Bluffs 462
Chicago 435
Ho Chi Minh City 433
The Dalles 425
Los Angeles 410
Izmir 368
Hanoi 361
Dublin 293
Nyköping 293
San Diego 278
Lauterbourg 269
New York 246
Princeton 241
Sofia 240
Milan 235
Eugene 226
Helsinki 202
Moscow 172
Salt Lake City 164
Buffalo 158
Washington 138
Modena 137
Dallas 126
Shanghai 123
São Paulo 123
Amsterdam 112
Redondo Beach 99
Kent 97
Frankfurt am Main 95
Atlanta 87
Bremen 80
Boardman 76
Da Nang 76
Tampa 76
Orem 69
Falls Church 67
Tokyo 67
Bologna 62
Nanjing 62
Jakarta 61
Elk Grove Village 58
Guangzhou 56
Rio de Janeiro 56
Miano 52
San Francisco 49
Norwalk 46
Haiphong 44
Phoenix 44
Toronto 40
Brantford 38
Brooklyn 37
Miami 36
Chennai 35
Kilburn 35
Baghdad 34
Kunming 33
Denver 32
Belo Horizonte 31
Montreal 29
Mexico City 28
Changsha 27
Reggio Emilia 27
Udine 27
Jinan 26
Munich 26
Paris 26
Columbus 25
Nuremberg 25
Taipei 25
Quito 24
Tashkent 24
Biên Hòa 23
Boston 23
Charlotte 23
Curitiba 23
Dhaka 23
Detroit 22
Las Vegas 22
Vienna 22
Totale 42.247
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 598
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 475
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 419
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 345
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 323
Impact Ionization and Photon Emission in MOS Capacitors and FETs 303
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 300
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 296
A design methodology for MOS Current-Mode Logic Frequency Dividers 292
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 283
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 282
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 279
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 278
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 275
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 274
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 271
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 267
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 266
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 266
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 264
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 264
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 261
Device simulation for decananometer MOSFETs 261
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 259
Relationship between capacitance and conductance in MOS capacitors 259
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 259
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 258
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 257
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 253
A better understanding of the low-field mobility in Graphene Nano-ribbons 244
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 244
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 244
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 243
Impact of carrier heating on backscattering in inversion layers 242
Tunneling path impact on semi-classical numerical simulations of TFET devices 241
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 239
Simulation of DC and RF Performance of the Graphene Base Transistor 238
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 236
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 234
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 233
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 233
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 231
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 230
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 230
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 230
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 229
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 228
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 228
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 228
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 227
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 227
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 226
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 225
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 224
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 224
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 223
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 223
Tunnelling Injection in Thin Oxide MOS Capacitors 222
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 220
General model for multiple surface reactions in ion-sensitive FETs 220
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 219
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 219
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 219
On the experimental determination of channel back-scattering in nanoMOSFETs 218
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 217
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 216
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 216
Graphene Base Transistors with optimized emitter and dielectrics 215
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 214
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 214
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 213
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 213
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 212
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 212
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs 210
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 210
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 210
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 209
Nanoscale MOS Transistors: Semi-Classical Transport and Applications 209
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 209
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 209
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 208
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 208
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 207
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 207
Ultra-High Frequency (500 MHz) Capacitance Spectroscopy for Nanobiosensing 207
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 206
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 206
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 206
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 206
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 205
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 204
On the Apparent Mobility in Nanometric n-MOSFETs 204
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology 204
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 204
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 204
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 203
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 203
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study 203
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 203
Totale 24.234
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Categoria #
all - tutte 243.660
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 243.660
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021329 0 0 0 0 0 0 0 0 0 0 0 329
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/202510.506 359 101 94 714 1.992 1.493 252 479 1.169 751 1.377 1.725
2025/202618.684 1.064 835 1.851 1.563 2.194 2.477 2.852 766 1.383 1.536 1.788 375
Totale 56.691