PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 22.931
EU - Europa 7.312
AS - Asia 6.531
SA - Sud America 929
AF - Africa 54
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 14
Totale 37.786
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Nazione #
US - Stati Uniti d'America 22.851
GB - Regno Unito 2.897
HK - Hong Kong 2.086
SG - Singapore 1.800
CN - Cina 1.616
BR - Brasile 829
IT - Italia 787
DE - Germania 777
UA - Ucraina 623
SE - Svezia 603
RU - Federazione Russa 514
TR - Turchia 391
IE - Irlanda 296
BG - Bulgaria 238
VN - Vietnam 155
KR - Corea 138
FI - Finlandia 119
FR - Francia 93
IN - India 79
NL - Olanda 79
ID - Indonesia 65
LT - Lituania 65
AT - Austria 41
JP - Giappone 41
CA - Canada 39
BD - Bangladesh 36
CH - Svizzera 31
AR - Argentina 30
BE - Belgio 28
MX - Messico 25
EC - Ecuador 20
PK - Pakistan 19
ES - Italia 18
IQ - Iraq 17
PL - Polonia 16
CZ - Repubblica Ceca 14
GR - Grecia 14
PT - Portogallo 14
TW - Taiwan 13
AU - Australia 12
MA - Marocco 11
ZA - Sudafrica 11
PY - Paraguay 10
VE - Venezuela 10
CO - Colombia 9
DZ - Algeria 9
IR - Iran 9
RO - Romania 9
UZ - Uzbekistan 9
A2 - ???statistics.table.value.countryCode.A2??? 8
AE - Emirati Arabi Uniti 8
MY - Malesia 8
TN - Tunisia 8
CL - Cile 7
HR - Croazia 7
JM - Giamaica 7
EG - Egitto 6
EU - Europa 6
AM - Armenia 5
NP - Nepal 5
SA - Arabia Saudita 5
BO - Bolivia 4
DK - Danimarca 4
IL - Israele 4
JO - Giordania 4
KE - Kenya 4
MK - Macedonia 4
NO - Norvegia 4
PE - Perù 4
UY - Uruguay 4
LA - Repubblica Popolare Democratica del Laos 3
NZ - Nuova Zelanda 3
OM - Oman 3
PA - Panama 3
SK - Slovacchia (Repubblica Slovacca) 3
AL - Albania 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
KH - Cambogia 2
KZ - Kazakistan 2
LV - Lettonia 2
MD - Moldavia 2
RS - Serbia 2
SN - Senegal 2
TT - Trinidad e Tobago 2
AZ - Azerbaigian 1
BW - Botswana 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
FK - Isole Falkland (Malvinas) 1
GA - Gabon 1
GT - Guatemala 1
GY - Guiana 1
HN - Honduras 1
HU - Ungheria 1
KG - Kirghizistan 1
KW - Kuwait 1
LK - Sri Lanka 1
LU - Lussemburgo 1
Totale 37.782
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Città #
Fairfield 3.705
Santa Clara 2.762
Hong Kong 2.078
Ashburn 1.963
Southend 1.862
Woodbridge 1.634
Seattle 1.435
Houston 1.404
Singapore 1.243
Chandler 1.194
Cambridge 1.177
Dearborn 1.144
Wilmington 1.114
Jacksonville 981
London 801
Hefei 595
Ann Arbor 497
Izmir 367
Nyköping 293
Dublin 288
Beijing 287
San Diego 271
Princeton 241
Sofia 238
Eugene 225
Council Bluffs 204
Moscow 165
New York 141
Modena 131
Seoul 124
Washington 115
Helsinki 102
Shanghai 92
Bremen 80
São Paulo 69
Falls Church 67
Bologna 63
Nanjing 61
Milan 57
Jakarta 55
Los Angeles 52
Amsterdam 49
Hanoi 49
Ho Chi Minh City 49
Norwalk 45
San Francisco 41
Chicago 35
Kilburn 35
Dallas 33
Kunming 33
Boardman 30
Guangzhou 30
Rio de Janeiro 30
Udine 27
Belo Horizonte 24
Jinan 24
Tokyo 23
Reggio Emilia 22
Changsha 21
Columbus 21
Chiswick 20
Redwood City 19
Fuzhou 18
Hounslow 18
Zurich 17
Frankfurt am Main 16
Paris 16
Prescot 16
Lappeenranta 15
Nanchang 15
Munich 14
Des Moines 13
Trieste 13
Vienna 13
Brooklyn 12
Misano Adriatico 12
Porto Alegre 12
Brussels 11
Nuremberg 11
Orsay 11
Portland 11
Warsaw 11
Boston 10
Campinas 10
Chengdu 10
Xi'an 10
Asunción 9
Brasília 9
New Delhi 9
Ottawa 9
Providence 9
Tashkent 9
Wuhan 9
Atlanta 8
Curitiba 8
Dhaka 8
Dong Ket 8
Franca 8
Padova 8
Phoenix 8
Totale 30.471
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Nome #
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 255
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 238
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 226
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 223
Impact Ionization and Photon Emission in MOS Capacitors and FETs 221
Relationship between capacitance and conductance in MOS capacitors 219
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 215
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 214
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 213
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 211
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 211
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 209
Impact of carrier heating on backscattering in inversion layers 207
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 205
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 205
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 203
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 197
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 196
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 195
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 193
A design methodology for MOS Current-Mode Logic Frequency Dividers 192
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 191
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 191
Device simulation for decananometer MOSFETs 190
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 189
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 187
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 186
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 185
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 185
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 184
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 183
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 182
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 182
Tunneling path impact on semi-classical numerical simulations of TFET devices 180
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 180
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 179
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 177
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 177
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 177
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 176
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 175
A better understanding of the low-field mobility in Graphene Nano-ribbons 175
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 175
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 174
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 174
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 174
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 173
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 173
General model for multiple surface reactions in ion-sensitive FETs 173
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 172
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 172
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 172
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 171
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 171
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 171
Simulation of DC and RF Performance of the Graphene Base Transistor 170
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 170
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 169
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 168
On the Apparent Mobility in Nanometric n-MOSFETs 168
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 168
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 167
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 167
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 166
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 166
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 166
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 166
Modeling electrostatic doping and series resistance in graphene-FETs 165
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 165
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 165
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 165
On the experimental determination of channel back-scattering in nanoMOSFETs 164
Graphene Base Transistors with optimized emitter and dielectrics 163
Semi-analytic Modeling for Hot Carriers in Electron Devices 163
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology 162
Modeling charge collection in x-ray imagers 162
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 162
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 162
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 162
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 161
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 161
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 161
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 160
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 159
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 159
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 159
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 159
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 158
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 158
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 158
Total Ionizing Dose Effects in Si-Based Tunnel FETs 158
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 158
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 157
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 157
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 157
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 157
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 156
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 156
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 155
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 155
Totale 17.814
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Categoria #
all - tutte 185.933
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 185.933
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20216.403 637 304 557 526 491 497 612 965 257 918 310 329
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/202510.541 359 101 94 714 1.992 1.493 252 479 1.169 751 1.393 1.744
2025/2026237 237 0 0 0 0 0 0 0 0 0 0 0
Totale 38.279