PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 31.544
AS - Asia 14.827
EU - Europa 9.760
SA - Sud America 1.819
Continente sconosciuto - Info sul continente non disponibili 522
AF - Africa 243
OC - Oceania 22
Totale 58.737
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Nazione #
US - Stati Uniti d'America 31.135
SG - Singapore 4.229
CN - Cina 4.155
GB - Regno Unito 2.972
HK - Hong Kong 2.374
IT - Italia 1.464
BR - Brasile 1.453
VN - Vietnam 1.413
DE - Germania 894
PL - Polonia 757
KR - Corea 682
UA - Ucraina 672
SE - Svezia 648
BD - Bangladesh 549
RU - Federazione Russa 540
FR - Francia 448
TR - Turchia 422
IE - Irlanda 302
IN - India 263
BG - Bulgaria 246
FI - Finlandia 227
CA - Canada 212
NL - Olanda 177
AR - Argentina 126
ID - Indonesia 108
JP - Giappone 107
MX - Messico 99
IQ - Iraq 98
LT - Lituania 71
EC - Ecuador 61
ES - Italia 60
PK - Pakistan 59
ZA - Sudafrica 58
AT - Austria 57
AE - Emirati Arabi Uniti 45
TW - Taiwan 44
CO - Colombia 42
BE - Belgio 39
VE - Venezuela 37
CL - Cile 36
PH - Filippine 34
CH - Svizzera 33
MA - Marocco 33
EG - Egitto 31
MY - Malesia 27
TN - Tunisia 27
JM - Giamaica 26
UZ - Uzbekistan 26
DZ - Algeria 25
PY - Paraguay 25
NP - Nepal 24
JO - Giordania 23
PT - Portogallo 22
RO - Romania 22
TH - Thailandia 22
SA - Arabia Saudita 21
AU - Australia 19
GR - Grecia 19
CZ - Repubblica Ceca 16
HN - Honduras 16
CR - Costa Rica 15
KE - Kenya 15
PE - Perù 15
OM - Oman 13
UY - Uruguay 13
IR - Iran 10
RS - Serbia 10
AZ - Azerbaigian 9
BO - Bolivia 9
HR - Croazia 9
A2 - ???statistics.table.value.countryCode.A2??? 8
AM - Armenia 8
IL - Israele 8
SK - Slovacchia (Repubblica Slovacca) 8
SN - Senegal 8
AL - Albania 7
ET - Etiopia 7
KZ - Kazakistan 7
NO - Norvegia 7
BB - Barbados 6
DK - Danimarca 6
EU - Europa 6
LB - Libano 6
TT - Trinidad e Tobago 6
AO - Angola 5
BH - Bahrain 5
CI - Costa d'Avorio 5
DO - Repubblica Dominicana 5
MK - Macedonia 5
PS - Palestinian Territory 5
QA - Qatar 5
GT - Guatemala 4
KH - Cambogia 4
NG - Nigeria 4
NI - Nicaragua 4
PA - Panama 4
PR - Porto Rico 4
XK - ???statistics.table.value.countryCode.XK??? 4
BA - Bosnia-Erzegovina 3
CY - Cipro 3
Totale 58.157
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Città #
Fairfield 3.706
Ashburn 3.304
Santa Clara 2.905
Singapore 2.781
Hong Kong 2.333
Southend 1.862
Hefei 1.770
San Jose 1.690
Woodbridge 1.634
Seattle 1.447
Houston 1.432
Chandler 1.194
Cambridge 1.179
Dearborn 1.144
Wilmington 1.141
Jacksonville 1.000
London 808
Warsaw 745
Seoul 651
Beijing 533
Council Bluffs 525
Ann Arbor 497
Los Angeles 456
Chicago 442
Ho Chi Minh City 434
The Dalles 425
Izmir 368
Hanoi 362
Dublin 293
Nyköping 293
San Diego 278
Lauterbourg 270
New York 269
Milan 257
Princeton 241
Sofia 240
Eugene 226
Helsinki 202
Moscow 172
Buffalo 170
Salt Lake City 165
Dallas 149
Washington 140
Modena 138
São Paulo 129
Shanghai 127
Amsterdam 115
Redondo Beach 100
Kent 97
Frankfurt am Main 96
Boardman 94
Atlanta 90
Bremen 80
Da Nang 76
Tampa 76
Bologna 73
Tokyo 71
Orem 69
Falls Church 67
Nanjing 62
Jakarta 61
Elk Grove Village 58
Guangzhou 57
Rio de Janeiro 56
Miano 55
San Francisco 50
Phoenix 48
Toronto 48
Norwalk 46
Haiphong 45
Brooklyn 40
Brantford 39
Miami 38
Chennai 36
Baghdad 35
Kilburn 35
Denver 34
Kunming 33
Mexico City 32
Montreal 32
Rome 32
Belo Horizonte 31
Reggio Emilia 31
Changsha 28
Munich 28
Udine 27
Columbus 26
Jinan 26
Paris 26
Taipei 26
Charlotte 25
Dhaka 25
Nuremberg 25
Boston 24
Des Moines 24
Las Vegas 24
Philadelphia 24
Quito 24
Tashkent 24
Biên Hòa 23
Totale 43.094
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 623
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 480
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 425
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 359
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 327
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 318
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 309
Impact Ionization and Photon Emission in MOS Capacitors and FETs 308
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 305
A design methodology for MOS Current-Mode Logic Frequency Dividers 300
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 290
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 290
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 286
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 280
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 277
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 276
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 274
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 272
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 271
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 270
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 270
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 269
Simulation of DC and RF Performance of the Graphene Base Transistor 268
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 268
Device simulation for decananometer MOSFETs 267
Relationship between capacitance and conductance in MOS capacitors 266
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 264
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 264
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 261
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 261
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 261
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 255
A better understanding of the low-field mobility in Graphene Nano-ribbons 250
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 249
Impact of carrier heating on backscattering in inversion layers 248
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 248
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 245
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 243
Tunneling path impact on semi-classical numerical simulations of TFET devices 242
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 241
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 239
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 237
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 237
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 237
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 235
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 235
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 235
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 234
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 233
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 232
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 231
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 231
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 230
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 230
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 229
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 228
General model for multiple surface reactions in ion-sensitive FETs 226
On the experimental determination of channel back-scattering in nanoMOSFETs 225
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 225
Tunnelling Injection in Thin Oxide MOS Capacitors 225
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 224
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 223
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 221
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 221
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 221
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 220
Graphene Base Transistors with optimized emitter and dielectrics 220
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 220
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 219
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 218
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 218
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 218
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 218
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 218
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 217
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 216
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs 215
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 215
Nanoscale MOS Transistors: Semi-Classical Transport and Applications 214
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study 214
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 214
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 213
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 213
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 212
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 212
Ultra-High Frequency (500 MHz) Capacitance Spectroscopy for Nanobiosensing 212
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 211
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 211
On the Apparent Mobility in Nanometric n-MOSFETs 210
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 210
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 210
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 209
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 209
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 208
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 208
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 208
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 207
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 207
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 207
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 207
Totale 24.882
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Categoria #
all - tutte 255.546
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 255.546
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.742 0 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/202510.541 359 101 94 714 1.992 1.493 252 479 1.169 751 1.393 1.744
2025/202619.425 1.080 847 1.864 1.593 2.196 2.480 2.858 770 1.389 1.537 1.790 1.021
2026/20271.270 983 287 0 0 0 0 0 0 0 0 0 0
Totale 58.737