This paper presents a new model for the surface roughness (SR) limited mobility (μSR). The model is suitable for bulk, for ultra thin body (UTB) and for Hetero-Structure Quantum Well (HS-QW) MOSFETs. Comparison with experimental mobility for Si bulk MOSFETs shows that a good agreement with measured mobility can be obtained with a r.m.s. value of the SR spectrum close to several AFM and TEM measurements. For III-V MOSFETs with small well thickness the proposed model shows a weaker mobility degradation with respect to the Tw6 behavior.
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs / Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2013), pp. 5.2.1-5.2.4. (Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) 2013 tenutosi a Washington, DC nel 9-11 Dec. 2013) [10.1109/IEDM.2013.6724565].
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs
PALESTRI, Pierpaolo;SELMI, Luca
2013
Abstract
This paper presents a new model for the surface roughness (SR) limited mobility (μSR). The model is suitable for bulk, for ultra thin body (UTB) and for Hetero-Structure Quantum Well (HS-QW) MOSFETs. Comparison with experimental mobility for Si bulk MOSFETs shows that a good agreement with measured mobility can be obtained with a r.m.s. value of the SR spectrum close to several AFM and TEM measurements. For III-V MOSFETs with small well thickness the proposed model shows a weaker mobility degradation with respect to the Tw6 behavior.
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