SELMI, LUCA
SELMI, LUCA
Dipartimento di Ingegneria "Enzo Ferrari"
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs
2020 Caruso, Enrico; Palestri, Pierpaolo; Selmi, Luca; Asanovski, Ruben
3D-FBK pixelsensors:Recent beam tests results with irradiated devices
2011 Micelli, Andrea; K., Helle; H., Sandaker; B., Stugu; M., Barbero; F., Hugging; M., Karagounis; V., Kostyukhin; H., Kruger; J. W., Tsung; N., Wermes; M., Capua; S., Fazio; A., Mastroberardino; G., Susinno; C., Gallrapp; B., Digirolamo; D., Dobos; A., Larosa; H., Pernegger; S., Roe; T., Slavicek; S., Pospisil; K., Jakobs; M., Kohler; U., Parzefall; G., Darbo; G., Gariano; C., Gemmeg; A., Rovani; E., Ruscino; C., Butter; R., Bates; V., Oshea; S., Parker; M., Cavalli Sforza; S., Grinstein; I., Korokolov; C., Pradilla; K., Einsweiler; M., Garcia Sciveres; M., Borri; C., Davia; J., Freestone; S., Kolya; C. H., Lail; C., Nellist; J., Pater; R., Thompson; S. J., Watts; M., Hoeferkampm; S., Seidelm; E., Bolle; H., Gjersdal; K. N., Sjoebaek; S., Stapnes; O., Rohne; D., Suo; C., Young; P., Hansson; P., Grenier; J., Hasi; C., Kenney; M., Kocian; P., Jackson; D., Silverstein; H., Davetak; B., Dewilde; D., Tsybychev; G. F., Dallabetta; P., Gabos; M., Povoli; Cobal, Marina; Giordani, Mario; Selmi, Luca; Cristofoli, Andrea; Esseni, David; Palestri, Pierpaolo; C., Fleta; M., Lozano; G., Pellegrini; M., Boscardin; A., Bagolini; C., Piemonte; S., Ronchin; N., Zorzi; T. E., Hansen; T., Hansen; A., Kok; N., Lietaer; J., Kalliopuska; A., Oja
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles
2000 Palestri, Pierpaolo; Fiegna, C.; Selmi, Luca; Peter, M. S.; Hurkx, G. A. M.; Slotboom, J. W.; Sangiorgi, Enrico
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects
1999 Esseni, David; Selmi, Luca
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis
1999 Selmi, Luca; Esseni, David
A better understanding of the low-field mobility in Graphene Nano-ribbons
2009 Bresciani, M; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors
2008 Comparone, G; Palestri, Pierpaolo; Esseni, David; Lucci, L; Selmi, Luca
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging
2018 Widdershoven, Frans; Cossettini, Andrea; Laborde, Cecilia; Bandiziol, Andrea; Paul van Swinderen, Peter; Lemay, Serge G.; Selmi, Luca
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures
1994 A., Ghetti; Selmi, Luca; Sangiorgi, Enrico; Abramo, Antonio; F., Venturi
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors
2002 Palestri, Pierpaolo; DALLA SERRA, Alberto; Selmi, Luca; M., Pavesi; Rigolli, P. L.; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs
1995 Selmi, Luca; Pavesi, M; WONG H., S; Acovic, A; Sangiorgi, Enrico
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations
2000 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
2009 Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs
2021 Asanovski, R.; Palestri, P.; Caruso, E.; Selmi, L.
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories
2010 Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca
A design methodology for MOS Current-Mode Logic Frequency Dividers
2007 Nonis, R; Palumbo, E; Palestri, Pierpaolo; Selmi, Luca
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs
2003 Palestri, P; Esseni, D.; Selmi, L.; Guegan, G.; Sangiorgi, E.
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections
2009 DE MICHIELIS, Luca; Selmi, Luca; Ionescu, A. M.
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions
2020 Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P.
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs
2019 Mele, Leandro Julian; Palestri, Pierpaolo; Selmi, Luca
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs | 1-gen-2020 | Caruso, Enrico; Palestri, Pierpaolo; Selmi, Luca; Asanovski, Ruben | |
3D-FBK pixelsensors:Recent beam tests results with irradiated devices | 1-gen-2011 | Micelli, Andrea; K., Helle; H., Sandaker; B., Stugu; M., Barbero; F., Hugging; M., Karagounis; V., Kostyukhin; H., Kruger; J. W., Tsung; N., Wermes; M., Capua; S., Fazio; A., Mastroberardino; G., Susinno; C., Gallrapp; B., Digirolamo; D., Dobos; A., Larosa; H., Pernegger; S., Roe; T., Slavicek; S., Pospisil; K., Jakobs; M., Kohler; U., Parzefall; G., Darbo; G., Gariano; C., Gemmeg; A., Rovani; E., Ruscino; C., Butter; R., Bates; V., Oshea; S., Parker; M., Cavalli Sforza; S., Grinstein; I., Korokolov; C., Pradilla; K., Einsweiler; M., Garcia Sciveres; M., Borri; C., Davia; J., Freestone; S., Kolya; C. H., Lail; C., Nellist; J., Pater; R., Thompson; S. J., Watts; M., Hoeferkampm; S., Seidelm; E., Bolle; H., Gjersdal; K. N., Sjoebaek; S., Stapnes; O., Rohne; D., Suo; C., Young; P., Hansson; P., Grenier; J., Hasi; C., Kenney; M., Kocian; P., Jackson; D., Silverstein; H., Davetak; B., Dewilde; D., Tsybychev; G. F., Dallabetta; P., Gabos; M., Povoli; Cobal, Marina; Giordani, Mario; Selmi, Luca; Cristofoli, Andrea; Esseni, David; Palestri, Pierpaolo; C., Fleta; M., Lozano; G., Pellegrini; M., Boscardin; A., Bagolini; C., Piemonte; S., Ronchin; N., Zorzi; T. E., Hansen; T., Hansen; A., Kok; N., Lietaer; J., Kalliopuska; A., Oja | |
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles | 1-gen-2000 | Palestri, Pierpaolo; Fiegna, C.; Selmi, Luca; Peter, M. S.; Hurkx, G. A. M.; Slotboom, J. W.; Sangiorgi, Enrico | |
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects | 1-gen-1999 | Esseni, David; Selmi, Luca | |
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis | 1-gen-1999 | Selmi, Luca; Esseni, David | |
A better understanding of the low-field mobility in Graphene Nano-ribbons | 1-gen-2009 | Bresciani, M; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors | 1-gen-2008 | Comparone, G; Palestri, Pierpaolo; Esseni, David; Lucci, L; Selmi, Luca | |
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging | 1-gen-2018 | Widdershoven, Frans; Cossettini, Andrea; Laborde, Cecilia; Bandiziol, Andrea; Paul van Swinderen, Peter; Lemay, Serge G.; Selmi, Luca | |
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures | 1-gen-1994 | A., Ghetti; Selmi, Luca; Sangiorgi, Enrico; Abramo, Antonio; F., Venturi | |
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors | 1-gen-2002 | Palestri, Pierpaolo; DALLA SERRA, Alberto; Selmi, Luca; M., Pavesi; Rigolli, P. L.; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico | |
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs | 1-gen-1995 | Selmi, Luca; Pavesi, M; WONG H., S; Acovic, A; Sangiorgi, Enrico | |
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations | 1-gen-2000 | DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca | |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs | 1-gen-2009 | Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak | |
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs | 1-gen-2021 | Asanovski, R.; Palestri, P.; Caruso, E.; Selmi, L. | |
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories | 1-gen-2010 | Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca | |
A design methodology for MOS Current-Mode Logic Frequency Dividers | 1-gen-2007 | Nonis, R; Palumbo, E; Palestri, Pierpaolo; Selmi, Luca | |
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs | 1-gen-2003 | Palestri, P; Esseni, D.; Selmi, L.; Guegan, G.; Sangiorgi, E. | |
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections | 1-gen-2009 | DE MICHIELIS, Luca; Selmi, Luca; Ionescu, A. M. | |
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions | 1-gen-2020 | Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P. | |
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs | 1-gen-2019 | Mele, Leandro Julian; Palestri, Pierpaolo; Selmi, Luca |