We present a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions. An expression for the rms value of the surface charge fluctuation and the resulting uncertainty in the ion concentration is derived as well. Application to nanoelectronic ISFET-based sensors for ions and proteins is demonstrated.
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs / Mele, Leandro Julian; Palestri, Pierpaolo; Selmi, Luca. - 2019-:(2019), pp. 343-346. (Intervento presentato al convegno 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 tenutosi a Udine nel 4-6 settembre 2019) [10.1109/SISPAD.2019.8870563].
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs
Palestri, Pierpaolo;Selmi, Luca
2019
Abstract
We present a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions. An expression for the rms value of the surface charge fluctuation and the resulting uncertainty in the ion concentration is derived as well. Application to nanoelectronic ISFET-based sensors for ions and proteins is demonstrated.
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