In this paper we use a Multi-Subband-Monte-Carlo model to study the transport in nMOSFETs featuring strained silicon channels. It is shown that state-of-the-art modeling of the mobility in n-type inversion layers cannot reproduce the mobility enhancements measured in Si devices with either uniaxial or biaxial strain. Possible reasons for this limitation are analyzed in detail.

A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors / Comparone, G; Palestri, Pierpaolo; Esseni, David; Lucci, L; Selmi, Luca. - In: JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. - ISSN 1546-1955. - 5:6(2008), pp. 1106-1114. [10.1166/jctn.2008.2544]

A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors

SELMI, Luca
2008-01-01

Abstract

In this paper we use a Multi-Subband-Monte-Carlo model to study the transport in nMOSFETs featuring strained silicon channels. It is shown that state-of-the-art modeling of the mobility in n-type inversion layers cannot reproduce the mobility enhancements measured in Si devices with either uniaxial or biaxial strain. Possible reasons for this limitation are analyzed in detail.
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A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors / Comparone, G; Palestri, Pierpaolo; Esseni, David; Lucci, L; Selmi, Luca. - In: JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. - ISSN 1546-1955. - 5:6(2008), pp. 1106-1114. [10.1166/jctn.2008.2544]
Comparone, G; Palestri, Pierpaolo; Esseni, David; Lucci, L; Selmi, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163169
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