In this paper we use a Multi-Subband-Monte-Carlo model to study the transport in nMOSFETs featuring strained silicon channels. It is shown that state-of-the-art modeling of the mobility in n-type inversion layers cannot reproduce the mobility enhancements measured in Si devices with either uniaxial or biaxial strain. Possible reasons for this limitation are analyzed in detail.
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors / Comparone, G; Palestri, Pierpaolo; Esseni, David; Lucci, L; Selmi, Luca. - In: JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. - ISSN 1546-1955. - 5:6(2008), pp. 1106-1114. [10.1166/jctn.2008.2544]
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors
PALESTRI, Pierpaolo;SELMI, Luca
2008
Abstract
In this paper we use a Multi-Subband-Monte-Carlo model to study the transport in nMOSFETs featuring strained silicon channels. It is shown that state-of-the-art modeling of the mobility in n-type inversion layers cannot reproduce the mobility enhancements measured in Si devices with either uniaxial or biaxial strain. Possible reasons for this limitation are analyzed in detail.File | Dimensione | Formato | |
---|---|---|---|
2008_06_Computational_Comparone_BetterUnderstandingRequirements.pdf
Accesso riservato
Dimensione
1.01 MB
Formato
Adobe PDF
|
1.01 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris