In this work, we show that a detailed atomistic model of SiN defects provides a consistent explanation of the program/erase/retention characteristics of both NROM and MANOS charge-trap cells. Our analysis of devices with SiN layers of different stoichiometry is also consistent with original KFM measurements of trapped charge drift in SiN layers.

A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories / Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca. - (2010), pp. 106-109. ((Intervento presentato al convegno 2010 IEEE International Memory Workshop, IMW 2010 tenutosi a Seoul, kor nel Maggio 2010 [10.1109/IMW.2010.5488384].

A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories

SELMI, Luca
2010-01-01

Abstract

In this work, we show that a detailed atomistic model of SiN defects provides a consistent explanation of the program/erase/retention characteristics of both NROM and MANOS charge-trap cells. Our analysis of devices with SiN layers of different stoichiometry is also consistent with original KFM measurements of trapped charge drift in SiN layers.
2010 IEEE International Memory Workshop, IMW 2010
Seoul, kor
Maggio 2010
106
109
Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories / Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca. - (2010), pp. 106-109. ((Intervento presentato al convegno 2010 IEEE International Memory Workshop, IMW 2010 tenutosi a Seoul, kor nel Maggio 2010 [10.1109/IMW.2010.5488384].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163480
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