We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor devices. We report examples of the use of the Multi- Subband Monte Carlo method to simulate MOSFETs with III-V compound semiconductor channel. Monte Carlo transport modeling of graphene-based transistors is also addressed.
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors / Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca. - (2015), pp. 5-12. (Intervento presentato al convegno 38th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2015 tenutosi a Opatija, Croatia nel May 2015) [10.1109/MIPRO.2015.7160227].
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors
PALESTRI, Pierpaolo;SELMI, Luca
2015
Abstract
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor devices. We report examples of the use of the Multi- Subband Monte Carlo method to simulate MOSFETs with III-V compound semiconductor channel. Monte Carlo transport modeling of graphene-based transistors is also addressed.
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