This letter investigates the definition and determination of mobility in nanometric metal–oxide–semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano-MOSFETs, even for very small VDS, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility.
On the Apparent Mobility in Nanometric n-MOSFETs / Zilli, M; Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 28:(2007), pp. 1036-1039. [10.1109/LED.2007.907553]
On the Apparent Mobility in Nanometric n-MOSFETs
SELMI, Luca
2007-01-01
Abstract
This letter investigates the definition and determination of mobility in nanometric metal–oxide–semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano-MOSFETs, even for very small VDS, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility.File | Dimensione | Formato | |
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2007_11_IEEE_Zilli_ApparentMobility.pdf
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