This letter investigates the definition and determination of mobility in nanometric metal–oxide–semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano-MOSFETs, even for very small VDS, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility.
On the Apparent Mobility in Nanometric n-MOSFETs / Zilli, M; Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 28:(2007), pp. 1036-1039. [10.1109/LED.2007.907553]
On the Apparent Mobility in Nanometric n-MOSFETs
SELMI, Luca
2007
Abstract
This letter investigates the definition and determination of mobility in nanometric metal–oxide–semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano-MOSFETs, even for very small VDS, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility.
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2007_11_IEEE_Zilli_ApparentMobility.pdf
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