Graphene-based capacitors and Graphene base transistors (GBTs) featuring innovative engineered tunnel barriers are characterized in DC and the data are thoroughly analyzed by means of an electrical model and a Monte Carlo transport simulator. Following model calibration on experiments, we then propose strategies to improve the DC common-base current gain and the cutoff frequency of GBTs. The DC and RF performance of optimized GBT structures based on realistic technology data are analyzed in detail to highlight advantages and potential limits of this device concept.
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines / Venica, Stefano; Driussi, Francesco; Vaziri, Sam; Palestri, Pierpaolo; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 64:2(2017), pp. 593-598. [10.1109/TED.2016.2636447]
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines
PALESTRI, Pierpaolo;SELMI, Luca
2017
Abstract
Graphene-based capacitors and Graphene base transistors (GBTs) featuring innovative engineered tunnel barriers are characterized in DC and the data are thoroughly analyzed by means of an electrical model and a Monte Carlo transport simulator. Following model calibration on experiments, we then propose strategies to improve the DC common-base current gain and the cutoff frequency of GBTs. The DC and RF performance of optimized GBT structures based on realistic technology data are analyzed in detail to highlight advantages and potential limits of this device concept.
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