We perform a comprehensive comparison of FinFETs, stacked nanowires (stacked NWs), circular and square gate-all-around (GAA) -FETs with same footprint, by using an in-house deterministic BTE solver accounting for quantum confinement, a wide set of scattering mechanisms and self-heating. We show that an increase in surface roughness (SR) can frustrate the improvement in on current, I, that for high-quality interfaces we observe in stacked NWs compared to FinFETs. Simulations suggest that SR also influences whether or not In0.53Ga0.47As can provide better I than strained silicon (sSi).

Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects / Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.. - ELETTRONICO. - (2017), pp. 314-317. ((Intervento presentato al convegno Internetional Electron Device Meeting (IEDM) tenutosi a San Francisco nel Dicembre 2017 [10.1109/IEDM.2017.8268382].

Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects

L. Selmi;
2017

Abstract

We perform a comprehensive comparison of FinFETs, stacked nanowires (stacked NWs), circular and square gate-all-around (GAA) -FETs with same footprint, by using an in-house deterministic BTE solver accounting for quantum confinement, a wide set of scattering mechanisms and self-heating. We show that an increase in surface roughness (SR) can frustrate the improvement in on current, I, that for high-quality interfaces we observe in stacked NWs compared to FinFETs. Simulations suggest that SR also influences whether or not In0.53Ga0.47As can provide better I than strained silicon (sSi).
2017
Internetional Electron Device Meeting (IEDM)
San Francisco
Dicembre 2017
314
317
Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects / Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.. - ELETTRONICO. - (2017), pp. 314-317. ((Intervento presentato al convegno Internetional Electron Device Meeting (IEDM) tenutosi a San Francisco nel Dicembre 2017 [10.1109/IEDM.2017.8268382].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1162999
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