We perform a comprehensive comparison of FinFETs, stacked nanowires (stacked NWs), circular and square gate-all-around (GAA) -FETs with same footprint, by using an in-house deterministic BTE solver accounting for quantum confinement, a wide set of scattering mechanisms and self-heating. We show that an increase in surface roughness (SR) can frustrate the improvement in on current, I, that for high-quality interfaces we observe in stacked NWs compared to FinFETs. Simulations suggest that SR also influences whether or not In0.53Ga0.47As can provide better I than strained silicon (sSi).
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects / Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.. - ELETTRONICO. - (2017), pp. 314-317. (Intervento presentato al convegno Internetional Electron Device Meeting (IEDM) tenutosi a San Francisco nel Dicembre 2017) [10.1109/IEDM.2017.8268382].
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects
P. Palestri;L. Selmi;
2017
Abstract
We perform a comprehensive comparison of FinFETs, stacked nanowires (stacked NWs), circular and square gate-all-around (GAA) -FETs with same footprint, by using an in-house deterministic BTE solver accounting for quantum confinement, a wide set of scattering mechanisms and self-heating. We show that an increase in surface roughness (SR) can frustrate the improvement in on current, I, that for high-quality interfaces we observe in stacked NWs compared to FinFETs. Simulations suggest that SR also influences whether or not In0.53Ga0.47As can provide better I than strained silicon (sSi).
| File | Dimensione | Formato | |
|---|---|---|---|
|
08268382.pdf
Accesso riservato
Dimensione
228.46 kB
Formato
Adobe PDF
|
228.46 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
