EnglishWe report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer- scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness. The results provide a useful reference for the calibration of TCAD compact models for thin films of InxGa(1-x) As compound semiconductors of interest for future CMOS technology nodes.
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes / Caruso, Enrico; Pin, Alessandro; Palestri, Pierpaolo; Selmi, Luca. - ELETTRONICO. - (2017), pp. 152-155. ((Intervento presentato al convegno 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) tenutosi a Athens, Greece nel 3-5 April 2017.
| Data di pubblicazione: | 2017 |
| Titolo: | On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes |
| Autore/i: | Caruso, Enrico; Pin, Alessandro; Palestri, Pierpaolo; Selmi, Luca |
| Autore/i UNIMORE: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ULIS.2017.7962587 |
| Nome del convegno: | 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) |
| Luogo del convegno: | Athens, Greece |
| Data del convegno: | 3-5 April 2017 |
| Pagina iniziale: | 152 |
| Pagina finale: | 155 |
| Citazione: | On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes / Caruso, Enrico; Pin, Alessandro; Palestri, Pierpaolo; Selmi, Luca. - ELETTRONICO. - (2017), pp. 152-155. ((Intervento presentato al convegno 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) tenutosi a Athens, Greece nel 3-5 April 2017. |
| Tipologia | Relazione in Atti di Convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | |
|---|---|---|---|
| ULIS_4_page.pdf | N/A | Administrator Richiedi una copia |
http://hdl.handle.net/11380/1163355
I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
Copyright © 2020