We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer- scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness. The results provide a useful reference for the calibration of TCAD compact models for thin films of InxGa(1-x) As compound semiconductors of interest for future CMOS technology nodes.

We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer-scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness. The results provide a useful reference for the calibration of TCAD compact models for thin films of InxGa(1-x)As compound semiconductors of interest for future CMOS technology nodes.

On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes / Caruso, Enrico; Pin, Alessandro; Palestri, Pierpaolo; Selmi, Luca. - ELETTRONICO. - (2017), pp. 152-155. ((Intervento presentato al convegno 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) tenutosi a Athens, Greece nel 3-5 April 2017 [10.1109/ULIS.2017.7962587].

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