We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer- scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness. The results provide a useful reference for the calibration of TCAD compact models for thin films of InxGa(1-x) As compound semiconductors of interest for future CMOS technology nodes.
We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer-scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness. The results provide a useful reference for the calibration of TCAD compact models for thin films of InxGa(1-x)As compound semiconductors of interest for future CMOS technology nodes.
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes / Caruso, Enrico; Pin, Alessandro; Palestri, Pierpaolo; Selmi, Luca. - ELETTRONICO. - (2017), pp. 152-155. (Intervento presentato al convegno 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) tenutosi a Athens, Greece nel 3-5 April 2017) [10.1109/ULIS.2017.7962587].
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes
PALESTRI, Pierpaolo;SELMI, Luca
2017
Abstract
We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer-scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness. The results provide a useful reference for the calibration of TCAD compact models for thin films of InxGa(1-x)As compound semiconductors of interest for future CMOS technology nodes.File | Dimensione | Formato | |
---|---|---|---|
ULIS_4_page.pdf
Accesso riservato
Dimensione
967.34 kB
Formato
Adobe PDF
|
967.34 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris