In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions G/ω and - ωdC/dω. By means of TCAD simulations, we show that G/ω and -ωdC/dω peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping (ND), oxide capacitance (COX), minority carrier lifetime (τg), interface defect parameters (NIT, σ) and majority carrier dielectric relaxation time (τr). Finally, we demonstrate how these insights on G/ω and -ωdC/dω can be used to extract COX, ND and τg from InGaAs MOSCAP measurements

Relationship between capacitance and conductance in MOS capacitors / Caruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Floyd, L.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, P. K.. - (2019), pp. 1-4. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices tenutosi a Udine nel 4-6 settembre 2019) [10.1109/SISPAD.2019.8870553].

Relationship between capacitance and conductance in MOS capacitors

Palestri, P.;Selmi, L.;
2019

Abstract

In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions G/ω and - ωdC/dω. By means of TCAD simulations, we show that G/ω and -ωdC/dω peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping (ND), oxide capacitance (COX), minority carrier lifetime (τg), interface defect parameters (NIT, σ) and majority carrier dielectric relaxation time (τr). Finally, we demonstrate how these insights on G/ω and -ωdC/dω can be used to extract COX, ND and τg from InGaAs MOSCAP measurements
2019
International Conference on Simulation of Semiconductor Processes and Devices
Udine
4-6 settembre 2019
1
4
Caruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Floyd, L.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, P. K.
Relationship between capacitance and conductance in MOS capacitors / Caruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Floyd, L.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, P. K.. - (2019), pp. 1-4. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices tenutosi a Udine nel 4-6 settembre 2019) [10.1109/SISPAD.2019.8870553].
File in questo prodotto:
File Dimensione Formato  
SISPAD Caruso Capacitance Conductance.pdf

Accesso riservato

Tipologia: Versione pubblicata dall'editore
Dimensione 245.84 kB
Formato Adobe PDF
245.84 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1182607
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 1
social impact