This paper reports a simulation study investigating the drive current in the prototypical SiGe n-type FinFET depicted in Fig.1 and for different values of the Ge content x in the Si(1−x)Gex active layer. To this purpose we performed strain simulations, band-structure calculations and Multi-Subband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer.

A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs / Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca. - (2012), pp. 322-325. ((Intervento presentato al convegno 42nd European Solid-State Device Research Conference, ESSDERC 2012 tenutosi a Bordeaux (FRANCE) nel 17-21 Sept. 2012 [10.1109/ESSDERC.2012.6343398].

A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs

SELMI, Luca
2012-01-01

Abstract

This paper reports a simulation study investigating the drive current in the prototypical SiGe n-type FinFET depicted in Fig.1 and for different values of the Ge content x in the Si(1−x)Gex active layer. To this purpose we performed strain simulations, band-structure calculations and Multi-Subband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer.
42nd European Solid-State Device Research Conference, ESSDERC 2012
Bordeaux (FRANCE)
17-21 Sept. 2012
322
325
Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs / Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca. - (2012), pp. 322-325. ((Intervento presentato al convegno 42nd European Solid-State Device Research Conference, ESSDERC 2012 tenutosi a Bordeaux (FRANCE) nel 17-21 Sept. 2012 [10.1109/ESSDERC.2012.6343398].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162925
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