In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L-G down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature.
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain / Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - vol.52, n.12:12(2005), pp. 2727-2735. [10.1109/TED.2005.859593]
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain
SELMI, Luca
2005-01-01
Abstract
In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L-G down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature.
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