The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus allowing a reduction of the supply voltage and power consumption in logic applications . Several TFETs with point Subthreshold Swing (SS) lower than 60mV/dec have been experimentally demonstrated with different architectures as conventional single gate Silicon-on-Insulator (SOI), Double Gate (DG) and Gate-All-Around (GAA). Unfortunately in all cases a relatively large average SS and a poor on-current have been observed. In conclusion with this work we have shown that although commonly fabricated TFETs feature source/channel interfaces normal to the transport direction, in a well-designed TFET the tunneling junction should have the same orientation of the component of the electric field modulated by the gate: only in this case the gate can effectively modulate the tunneling barrier, resulting in a steeper average SS and higher ION.
|Data di pubblicazione:||2011|
|Titolo:||Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier|
|Autore/i:||DE MICHIELIS, Luca; Lattanzio, L; Palestri, Pierpaolo; Selmi, Luca; Ionescu, A. M.|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/DRC.2011.5994440|
|Nome del convegno:||69th Annual Device Research Conference (DRC), 2011|
|Luogo del convegno:||Santa Barbara, CA, 20-22 June 2011|
|Data del convegno:||June 2011|
|Citazione:||Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier / DE MICHIELIS, Luca; Lattanzio, L; Palestri, Pierpaolo; Selmi, Luca; Ionescu, A. M.. - (2011), pp. 111-112. ((Intervento presentato al convegno 69th Annual Device Research Conference (DRC), 2011 tenutosi a Santa Barbara, CA, 20-22 June 2011 nel June 2011.|
|Tipologia||Relazione in Atti di Convegno|
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