In this paper, a Monte-Carlo simulator, including quantum corrections to the potential and an improved physically based model for surface roughness scattering is used to study the electronic transport in double gate (DG) SO1 MOSFETs with Lc down to 14nm. Our results demonstrate that, for the explored LG values, scattering still controls the ON current (IDS), which for Lc = 25nm is overestimated by about a factor of 2 by a ballistic model. By monitoring the electrons back-scattered at the source, we discuss the role of the scattering in different parts of the device.
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs / Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca. - (2004), pp. 605-608. (Intervento presentato al convegno International Electron Device Meeting (IEDM) tenutosi a San Francisco, CA, usa nel December) [10.1109/IEDM.2004.1419234].
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs
PALESTRI, Pierpaolo;SELMI, Luca
2004
Abstract
In this paper, a Monte-Carlo simulator, including quantum corrections to the potential and an improved physically based model for surface roughness scattering is used to study the electronic transport in double gate (DG) SO1 MOSFETs with Lc down to 14nm. Our results demonstrate that, for the explored LG values, scattering still controls the ON current (IDS), which for Lc = 25nm is overestimated by about a factor of 2 by a ballistic model. By monitoring the electrons back-scattered at the source, we discuss the role of the scattering in different parts of the device.
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