We present an improved Random Path Length algorithm to accurately and efficiently estimate the design space of heterostructure avalanche photodiodes (APDs) in terms of gain, noise and bandwidth without any need of full Monte Carlo transport simulations. The underlying nonlocal model for impact ionization goes beyond the Dead Space concept and it is suited to handle staircase structures composed by a superlattice of III-V compounds as well as thick and thin p-i-n APDs. The model parameters have been calibrated on GaAs and AlxGa1−xAs p-i-n APDs in a previous work. In this work GaAs p-i-n APDs are compared to staircase structures in terms of noise and bandwidth.

An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes / Pilotto, Alessandro; Palestri, Pierpaolo; Selmi, Luca; Antonelli, Matias; Arfelli, Fulvia; Biasiol, Giorgio; Cautero, Giuseppe; Driussi, Francesco; Menk, Ralf H.; Nichetti, Camilla; Steinhartova, Tereza. - 2018-:(2018), pp. 26-30. ((Intervento presentato al convegno 2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018 tenutosi a Austin, TX, USA nel 24-26 Sept. 2018 [10.1109/SISPAD.2018.8551751].

An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes

Selmi, Luca;
2018

Abstract

We present an improved Random Path Length algorithm to accurately and efficiently estimate the design space of heterostructure avalanche photodiodes (APDs) in terms of gain, noise and bandwidth without any need of full Monte Carlo transport simulations. The underlying nonlocal model for impact ionization goes beyond the Dead Space concept and it is suited to handle staircase structures composed by a superlattice of III-V compounds as well as thick and thin p-i-n APDs. The model parameters have been calibrated on GaAs and AlxGa1−xAs p-i-n APDs in a previous work. In this work GaAs p-i-n APDs are compared to staircase structures in terms of noise and bandwidth.
2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018
Austin, TX, USA
24-26 Sept. 2018
2018-
26
30
Pilotto, Alessandro; Palestri, Pierpaolo; Selmi, Luca; Antonelli, Matias; Arfelli, Fulvia; Biasiol, Giorgio; Cautero, Giuseppe; Driussi, Francesco; Menk, Ralf H.; Nichetti, Camilla; Steinhartova, Tereza
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes / Pilotto, Alessandro; Palestri, Pierpaolo; Selmi, Luca; Antonelli, Matias; Arfelli, Fulvia; Biasiol, Giorgio; Cautero, Giuseppe; Driussi, Francesco; Menk, Ralf H.; Nichetti, Camilla; Steinhartova, Tereza. - 2018-:(2018), pp. 26-30. ((Intervento presentato al convegno 2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018 tenutosi a Austin, TX, USA nel 24-26 Sept. 2018 [10.1109/SISPAD.2018.8551751].
File in questo prodotto:
File Dimensione Formato  
Final Pilotto.pdf

non disponibili

Tipologia: Post-print dell'autore (bozza post referaggio)
Dimensione 329.35 kB
Formato Adobe PDF
329.35 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1169417
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 4
social impact