EnglishWe present a new Monte Carlo technique to investigate the signal delay of advanced BJTs featuring relevant non-local effects. The method is suited to analyze base and collector signal delays in presence of significant nonequilibrium transport effects and up to high currents, and to verify the physical meaning and applicability of delay expressions for compact models.
We present a new Monte Carlo technique to investigate the signal delay of advanced BJTs featuring relevant non-local effects. The method is suited to analyze base and collector signal delays in presence of significant nonequilibrium transport effects and up to high currents, and to verify the physical meaning and applicability of delay expressions for compact models.
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents / Palestri, Pierpaolo; Selmi, Luca; G. A. M., Hurkx; J. W., Slotboom. - (2000), pp. 46-49. ((Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices tenutosi a SEATTLE, WA nel SEP 06-08, 2000 [10.1109/SISPAD.2000.871203].
| Data di pubblicazione: | 2000 | |
| Titolo: | A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents | |
| Autore/i: | Palestri, Pierpaolo; Selmi, Luca; G. A. M., Hurkx; J. W., Slotboom | |
| Autore/i UNIMORE: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/SISPAD.2000.871203 | |
| Codice identificativo Scopus: | 2-s2.0-0033697466 | |
| Codice identificativo ISI: | WOS:000166421700011 | |
| Nome del convegno: | International Conference on Simulation of Semiconductor Processes and Devices | |
| Luogo del convegno: | SEATTLE, WA | |
| Data del convegno: | SEP 06-08, 2000 | |
| Pagina iniziale: | 46 | |
| Pagina finale: | 49 | |
| Citazione: | A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents / Palestri, Pierpaolo; Selmi, Luca; G. A. M., Hurkx; J. W., Slotboom. - (2000), pp. 46-49. ((Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices tenutosi a SEATTLE, WA nel SEP 06-08, 2000 [10.1109/SISPAD.2000.871203]. | |
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